STMicroelectronics, Inc. Single FETs, MOSFETs STD3N40K3

Description
MOSFET N CH 400V 2A DPAK
Request a Quote Datasheet
Description
MOSFET N CH 400V 2A DPAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - STD3N40K3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STD3N40K3
Single FETs, MOSFETs STD3N40K3
MOSFET N CH 400V 2A DPAK

MOSFET N CH 400V 2A DPAK

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD3N40K3 - 066313-STD3N40K3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD3N40K3
066313-STD3N40K3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD3N40K3 066313-STD3N40K3
Manufacturer: STMicroelectronics Win Source Part Number: 066313-STD3N40K3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 30W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 400V Continuous Drain Current at 25°C: 2A (Tc) Gate-Source Threshold Voltage: 4.5V @ 50μA Max Gate Charge: 11nC @ 10V Max Input Capacitance: 165pF @ 50V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 3.4 Ohm @ 900mA, 10V Alternative Parts (Cross-Reference): FDD3N40TM; MDD3N40RH; STD2NB40T4; Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 066313-STD3N40K3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 30W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 400V
Continuous Drain Current at 25°C: 2A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 50μA
Max Gate Charge: 11nC @ 10V
Max Input Capacitance: 165pF @ 50V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 3.4 Ohm @ 900mA, 10V
Alternative Parts (Cross-Reference): FDD3N40TM; MDD3N40RH; STD2NB40T4;
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STD3N40K3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STD3N40K3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STD3N40K3
MOSFET N CH 400V 2A DPAK

MOSFET N CH 400V 2A DPAK

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-Ch 400V 2.7 Ohm 2A SuperMESH3

MOSFET N-Ch 400V 2.7 Ohm 2A SuperMESH3

Buy Now Datasheet

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number STD3N40K3 066313-STD3N40K3 STD3N40K3 STD3N40K3
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD3N40K3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel; N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 400 volts 400 volts
IDSS 2000 milliamps
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