900V N-CH MOSFET, 2.1A, 6.5 Ohm, DPAK, SuperMESH Product overview: STD2NK90ZT4 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 900V, 2.1A, 6.5 Ohm, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 900V, 2.1A, 6.5 Ohm, DPAK, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STD2NK90ZT4 can be used for catalog matching and distributor lookup.
MOSFET N-CH 900V 2.1A DPAK
N-Channel 900V 2.1A (Tc) 70W (Tc) Surface Mount DPAK
N-Channel 900V 2.1A (Tc) 70W (Tc) Surface Mount DPAK
N-Channel 900V 2.1A (Tc) 70W (Tc) Surface Mount DPAK
Manufacturer: STMicroelectronics
Win Source Part Number: 031129-STD2NK90ZT4
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 70W (Tc)
Family Name: STD2NK90
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 900V
Continuous Drain Current at 25°C: 2.1A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 50μA
Max Gate Charge: 27nC @ 10V
Max Input Capacitance: 485pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 6.5 Ohm @ 1.05A, 10V
Alternative Parts (Cross-Reference): TSM2N100CP ROG; AOD2N100; AP02N90H; TSM3N90CP ROG;
Introduction Date: September 27, 2004
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2029
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Limited
MOSFET, N-CH, 900V, 2.1A, TO-252; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:2.1A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V RoHS Compliant: Yes
MOSFET N-CH 900V 2.1A DPAK
MOSFET N-Ch 900 Volt 2.1Amp Zener SuperMESH
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-STD2NK90ZT4 | STD2NK90ZT4 | 497-4332-1-ND | 031129-STD2NK90ZT4 | 33X1195 | STD2NK90ZT4 | STD2NK90ZT4 |
| Product Name | 900V 2.1A 6.5 Ohm DPAK MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD2NK90ZT4 | Mosfet, N-Ch, 900V, 2.1A, To-252; Channel Type Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | |||
| PD | 70000 milliwatts | 70000 milliwatts | 70000 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
