MOSFET N-CH 900V 2.1A IPAK
N-Channel 900V 2.1A (Tc) 70W (Tc) Through Hole I-PAK
Manufacturer: STMicroelectronics
Win Source Part Number: 1102873-STD2NK90Z-1
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 70W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: I-Pak
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 900V
Continuous Drain Current at 25°C: 2.1A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 50μA
Max Gate Charge: 27nC @ 10V
Max Input Capacitance: 485pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 6.5 Ohm @ 1.05A, 10V
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Balance
MOSFET N-Ch, 900V-5ohms Zener SuperMESH 2.1A
MOSFET N-CH 900V 2.1A IPAK
MOSFET, N CHANNEL, 900V, 2.1A, IPAK; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:1.05A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; MSL:-RoHS Compliant: Yes
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | STD2NK90Z-1 | 497-STD2NK90Z-1-ND | 1102873-STD2NK90Z-1 | STD2NK90Z-1 | STD2NK90Z-1 | 33R1149 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD2NK90Z-1 | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N Channel, 900V, 2.1A, Ipak; Channel Type Stmicroelectronics |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 900 volts | 900 volts | ||||
| IDSS | 2100 milliamps | 1050 milliamps |
