STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD2NK90Z-1 STD2NK90Z-1

Description
Manufacturer: STMicroelectronics Win Source Part Number: 1102873-STD2NK90Z-1 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 70W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: I-Pak Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 900V Continuous Drain Current at 25°C: 2.1A (Tc) Gate-Source Threshold Voltage: 4.5V @ 50μA Max Gate Charge: 27nC @ 10V Max Input Capacitance: 485pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 6.5 Ohm @ 1.05A, 10V Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD2NK90Z-1 - 1102873-STD2NK90Z-1 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - STD2NK90Z-1 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - 497-STD2NK90Z-1-ND - DigiKey
    DigiKey
  • Mosfet, N Channel, 900V, 2.1A, Ipak; Channel Type Stmicroelectronics - 33R1149 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STD2NK90Z-1 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: STMicroelectronics Win Source Part Number: 1102873-STD2NK90Z-1 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 70W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: I-Pak Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 900V Continuous Drain Current at 25°C: 2.1A (Tc) Gate-Source Threshold Voltage: 4.5V @ 50μA Max Gate Charge: 27nC @ 10V Max Input Capacitance: 485pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 6.5 Ohm @ 1.05A, 10V Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD2NK90Z-1 - 1102873-STD2NK90Z-1 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD2NK90Z-1
1102873-STD2NK90Z-1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD2NK90Z-1 1102873-STD2NK90Z-1
Manufacturer: STMicroelectronics Win Source Part Number: 1102873-STD2NK90Z-1 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 70W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: I-Pak Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 900V Continuous Drain Current at 25°C: 2.1A (Tc) Gate-Source Threshold Voltage: 4.5V @ 50μA Max Gate Charge: 27nC @ 10V Max Input Capacitance: 485pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 6.5 Ohm @ 1.05A, 10V Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 1102873-STD2NK90Z-1
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 70W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: I-Pak
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 900V
Continuous Drain Current at 25°C: 2.1A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 50μA
Max Gate Charge: 27nC @ 10V
Max Input Capacitance: 485pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 6.5 Ohm @ 1.05A, 10V
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - STD2NK90Z-1 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STD2NK90Z-1
Single FETs, MOSFETs STD2NK90Z-1
MOSFET N-CH 900V 2.1A IPAK

MOSFET N-CH 900V 2.1A IPAK

Supplier's Site Datasheet
Single FETs, MOSFETs - 497-STD2NK90Z-1-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-STD2NK90Z-1-ND
Single FETs, MOSFETs 497-STD2NK90Z-1-ND
N-Channel 900V 2.1A (Tc) 70W (Tc) Through Hole I-PAK

N-Channel 900V 2.1A (Tc) 70W (Tc) Through Hole I-PAK

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
STD2NK90Z-1
MOSFET STD2NK90Z-1
MOSFET N-Ch, 900V-5ohms Zener SuperMESH 2.1A

MOSFET N-Ch, 900V-5ohms Zener SuperMESH 2.1A

Buy Now Datasheet
Mosfet, N Channel, 900V, 2.1A, Ipak; Channel Type Stmicroelectronics - 33R1149 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 900V, 2.1A, Ipak; Channel Type Stmicroelectronics
33R1149
Mosfet, N Channel, 900V, 2.1A, Ipak; Channel Type Stmicroelectronics 33R1149
MOSFET, N CHANNEL, 900V, 2.1A, IPAK; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:1.05A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; MSL:-RoHS Compliant: Yes

MOSFET, N CHANNEL, 900V, 2.1A, IPAK; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:1.05A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; MSL:-RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STD2NK90Z-1 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STD2NK90Z-1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STD2NK90Z-1
MOSFET N-CH 900V 2.1A IPAK

MOSFET N-CH 900V 2.1A IPAK

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1102873-STD2NK90Z-1 STD2NK90Z-1 497-STD2NK90Z-1-ND STD2NK90Z-1 33R1149 STD2NK90Z-1
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD2NK90Z-1 Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Mosfet, N Channel, 900V, 2.1A, Ipak; Channel Type Stmicroelectronics Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 900 volts 900 volts
PD 70000 milliwatts 70000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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