STMicroelectronics, Inc. Single FETs, MOSFETs STD2NK60Z-1

Description
N-Channel 600V 1.4A (Tc) 45W (Tc) Through Hole I-PAK
Request a Quote Datasheet
Description
N-Channel 600V 1.4A (Tc) 45W (Tc) Through Hole I-PAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 497-12555-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-12555-5-ND
Single FETs, MOSFETs 497-12555-5-ND
N-Channel 600V 1.4A (Tc) 45W (Tc) Through Hole I-PAK

N-Channel 600V 1.4A (Tc) 45W (Tc) Through Hole I-PAK

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD2NK60Z-1 - 066311-STD2NK60Z-1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD2NK60Z-1
066311-STD2NK60Z-1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD2NK60Z-1 066311-STD2NK60Z-1
Manufacturer: STMicroelectronics Win Source Part Number: 066311-STD2NK60Z-1 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 45W (Tc) Family Name: STD2NK60 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: I-Pak Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 1.4A (Tc) Gate-Source Threshold Voltage: 4.5V @ 50μA Max Gate Charge: 10nC @ 10V Max Input Capacitance: 170pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 8 Ohm @ 700mA, 10V Alternative Parts (Cross-Reference): H01N60I; AP02N60J-HF; AP01N60J; Introduction Date: December 05, 2003 ECCN: EAR99 Country of Origin: China Estimated EOL Date: Obsolete Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 066311-STD2NK60Z-1
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 45W (Tc)
Family Name: STD2NK60
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: I-Pak
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 1.4A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 50μA
Max Gate Charge: 10nC @ 10V
Max Input Capacitance: 170pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 8 Ohm @ 700mA, 10V
Alternative Parts (Cross-Reference): H01N60I; AP02N60J-HF; AP01N60J;
Introduction Date: December 05, 2003
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: Obsolete
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
600V 1.4A MOSFET Transistor
278-STD2NK60Z-1
600V 1.4A MOSFET Transistor 278-STD2NK60Z-1
600V 1.4A N-CH MOSFET, 8R RdsOn, TO-251 Power Transistor Product overview: STD2NK60Z-1 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 1.4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 1.4A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STD2NK60Z-1 can be used for catalog matching and distributor lookup.

600V 1.4A N-CH MOSFET, 8R RdsOn, TO-251 Power Transistor Product overview: STD2NK60Z-1 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 1.4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 1.4A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STD2NK60Z-1 can be used for catalog matching and distributor lookup.

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STD2NK60Z-1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STD2NK60Z-1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STD2NK60Z-1
MOSFET N-CH 600V 1.4A IPAK

MOSFET N-CH 600V 1.4A IPAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 497-12555-5-ND 066311-STD2NK60Z-1 278-STD2NK60Z-1 STD2NK60Z-1
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD2NK60Z-1 600V 1.4A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel
Package Type TO-251-3 Short Leads, IPAK, TO-251AA SOT3; I-Pak TO-251-3 Short Leads, IPak, TO-251AA
V(BR)DSS 600 volts
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