STMicroelectronics, Inc. Single FETs, MOSFETs STD25NF10T4

MOSFET N-CH 100V 25A DPAK

N-Channel 100V 25A (Tc) 100W (Tc) Surface Mount DPAK

N-Channel 100V 25A (Tc) 100W (Tc) Surface Mount DPAK

N-Channel 100V 25A (Tc) 100W (Tc) Surface Mount DPAK

(PRICE/TC) MOSFET, N CHANNEL, 100V, 25A, DPAK; TRANSISTOR POLARITY:N CHANNEL; DRAIN SOURCE VOLTAGE VDS:100V; CONTINUOUS DRAIN CURRENT ID:12.5A; ON RESISTANCE RDS(ON):0.033OHM; TRANSISTOR MOUNTING:SURFACE MOUNT; RDS(ON) TEST VOLTAGE VGS:10V ROHS COMPLIANT:. FREE 2 YEAR RADWELL WARRANTY

Nchannel MOSFET highcurr power switch

Nchannel MOSFET highcurr power switch

Nchannel MOSFET highcurr power switch

Manufacturer: STMicroelectronics
Win Source Part Number: 031126-STD25NF10T4
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 100W (Tc)
Family Name: STD25NF10T4
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 25A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 55nC @ 10V
Max Input Capacitance: 1550pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 38 mOhm @ 12.5A, 10V
Alternative Parts (Cross-Reference): NVD6415ANLT4G-VF01; IRFR3411TRR; NVD6495NLT4G-VF01; NVD6415ANLT4G;
Introduction Date: October 27, 2000
ECCN: EAR99
Country of Origin: China, Italy, Malta, Morocco
Estimated EOL Date: 2029
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Limited