STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD25N10F7 STD25N10F7

Description
Manufacturer: STMicroelectronics Win Source Part Number: 1102863-STD25N10F7 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 40W (Tc) Family Name: STD25N10F7 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 25A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 14nC @ 10V Max Input Capacitance: 920pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 35 mOhm @ 12.5A, 10V ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2031 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD25N10F7 - 1102863-STD25N10F7 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - STD25N10F7 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - 497-14530-6-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 497-14530-1-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 497-14530-2-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STD25N10F7 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N-Ch, 100V, 25A, 40W, To-252; Transistor Polarity Stmicroelectronics - 07AH6960 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: STMicroelectronics Win Source Part Number: 1102863-STD25N10F7 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 40W (Tc) Family Name: STD25N10F7 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 25A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 14nC @ 10V Max Input Capacitance: 920pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 35 mOhm @ 12.5A, 10V ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2031 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD25N10F7 - 1102863-STD25N10F7 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD25N10F7
1102863-STD25N10F7
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD25N10F7 1102863-STD25N10F7
Manufacturer: STMicroelectronics Win Source Part Number: 1102863-STD25N10F7 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 40W (Tc) Family Name: STD25N10F7 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 25A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 14nC @ 10V Max Input Capacitance: 920pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 35 mOhm @ 12.5A, 10V ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2031 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 1102863-STD25N10F7
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 40W (Tc)
Family Name: STD25N10F7
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 25A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 14nC @ 10V
Max Input Capacitance: 920pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 35 mOhm @ 12.5A, 10V
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2031
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - STD25N10F7 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STD25N10F7
Single FETs, MOSFETs STD25N10F7
MOSFET N-CH 100V 25A DPAK

MOSFET N-CH 100V 25A DPAK

Supplier's Site Datasheet
Single FETs, MOSFETs - 497-14530-6-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-14530-6-ND
Single FETs, MOSFETs 497-14530-6-ND
N-Channel 100V 25A (Tc) 40W (Tc) Surface Mount DPAK

N-Channel 100V 25A (Tc) 40W (Tc) Surface Mount DPAK

Buy Now Datasheet
Single FETs, MOSFETs - 497-14530-1-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-14530-1-ND
Single FETs, MOSFETs 497-14530-1-ND
N-Channel 100V 25A (Tc) 40W (Tc) Surface Mount DPAK

N-Channel 100V 25A (Tc) 40W (Tc) Surface Mount DPAK

Buy Now Datasheet
Single FETs, MOSFETs - 497-14530-2-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-14530-2-ND
Single FETs, MOSFETs 497-14530-2-ND
N-Channel 100V 25A (Tc) 40W (Tc) Surface Mount DPAK

N-Channel 100V 25A (Tc) 40W (Tc) Surface Mount DPAK

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STD25N10F7 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STD25N10F7
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STD25N10F7
MOSFET N-CH 100V 25A DPAK

MOSFET N-CH 100V 25A DPAK

Supplier's Site
Mosfet, N-Ch, 100V, 25A, 40W, To-252; Transistor Polarity Stmicroelectronics - 07AH6960 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 100V, 25A, 40W, To-252; Transistor Polarity Stmicroelectronics
07AH6960
Mosfet, N-Ch, 100V, 25A, 40W, To-252; Transistor Polarity Stmicroelectronics 07AH6960
MOSFET, N-CH, 100V, 25A, 40W, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.027ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power RoHS Compliant: Yes

MOSFET, N-CH, 100V, 25A, 40W, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.027ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
STD25N10F7
MOSFET STD25N10F7
MOSFET Nchanl 100V 0027 Ohm typ 25 A Pwr MOSFET

MOSFET Nchanl 100V 0027 Ohm typ 25 A Pwr MOSFET

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1102863-STD25N10F7 STD25N10F7 497-14530-6-ND STD25N10F7 07AH6960 STD25N10F7
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD25N10F7 Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 100V, 25A, 40W, To-252; Transistor Polarity Stmicroelectronics MOSFET
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 100 volts 100 volts
PD 40000 milliwatts 40000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type SOT3; TO-252 (DPAK); DPAK TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 TO-3; TO-252 (DPAK)
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