STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD1NK80Z-1 STD1NK80Z-1

Description
Manufacturer: STMicroelectronics Win Source Part Number: 066308-STD1NK80Z-1 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 45W (Tc) Family Name: STD1NK80 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: I-Pak Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 1A (Tc) Gate-Source Threshold Voltage: 4.5V @ 50μA Max Gate Charge: 7.7nC @ 10V Max Input Capacitance: 160pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 16 Ohm @ 500mA, 10V Alternative Parts (Cross-Reference): PJU1N80; FQU1N80TU; FQU1N80; IXTU1N80P; Introduction Date: March 23, 1998 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2022 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Balance
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 066308-STD1NK80Z-1 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 45W (Tc) Family Name: STD1NK80 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: I-Pak Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 1A (Tc) Gate-Source Threshold Voltage: 4.5V @ 50μA Max Gate Charge: 7.7nC @ 10V Max Input Capacitance: 160pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 16 Ohm @ 500mA, 10V Alternative Parts (Cross-Reference): PJU1N80; FQU1N80TU; FQU1N80; IXTU1N80P; Introduction Date: March 23, 1998 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2022 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD1NK80Z-1 - 066308-STD1NK80Z-1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD1NK80Z-1
066308-STD1NK80Z-1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD1NK80Z-1 066308-STD1NK80Z-1
Manufacturer: STMicroelectronics Win Source Part Number: 066308-STD1NK80Z-1 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 45W (Tc) Family Name: STD1NK80 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: I-Pak Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 1A (Tc) Gate-Source Threshold Voltage: 4.5V @ 50μA Max Gate Charge: 7.7nC @ 10V Max Input Capacitance: 160pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 16 Ohm @ 500mA, 10V Alternative Parts (Cross-Reference): PJU1N80; FQU1N80TU; FQU1N80; IXTU1N80P; Introduction Date: March 23, 1998 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2022 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 066308-STD1NK80Z-1
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 45W (Tc)
Family Name: STD1NK80
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: I-Pak
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 1A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 50μA
Max Gate Charge: 7.7nC @ 10V
Max Input Capacitance: 160pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 16 Ohm @ 500mA, 10V
Alternative Parts (Cross-Reference): PJU1N80; FQU1N80TU; FQU1N80; IXTU1N80P;
Introduction Date: March 23, 1998
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2022
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - STD1NK80Z-1 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STD1NK80Z-1
Single FETs, MOSFETs STD1NK80Z-1
MOSFET N-CH 800V 1A IPAK

MOSFET N-CH 800V 1A IPAK

Supplier's Site Datasheet
Singapore
N-Channel 1A 800V 0.016ohm MOSFET Transistor
278-STD1NK80Z-1
N-Channel 1A 800V 0.016ohm MOSFET Transistor 278-STD1NK80Z-1
1A, 800V, 0.016ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA, TO-251, IPAK-3 Product overview: STD1NK80Z-1 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 1A, 800V, 0.016ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1A, 800V, 0.016ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STD1NK80Z-1 can be used for catalog matching and distributor lookup.

1A, 800V, 0.016ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA, TO-251, IPAK-3 Product overview: STD1NK80Z-1 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 1A, 800V, 0.016ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1A, 800V, 0.016ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STD1NK80Z-1 can be used for catalog matching and distributor lookup.

Supplier's Site
Single FETs, MOSFETs - 497-16198-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-16198-5-ND
Single FETs, MOSFETs 497-16198-5-ND
N-Channel 800V 1A (Tc) 45W (Tc) Through Hole TO-251 (IPAK)

N-Channel 800V 1A (Tc) 45W (Tc) Through Hole TO-251 (IPAK)

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET N-Ch, 800V-13ohms 1A

MOSFET N-Ch, 800V-13ohms 1A

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STD1NK80Z-1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STD1NK80Z-1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STD1NK80Z-1
MOSFET N-CH 800V 1A IPAK

MOSFET N-CH 800V 1A IPAK

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 066308-STD1NK80Z-1 STD1NK80Z-1 278-STD1NK80Z-1 497-16198-5-ND STD1NK80Z-1 STD1NK80Z-1
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD1NK80Z-1 Single FETs, MOSFETs N-Channel 1A 800V 0.016ohm MOSFET Transistor Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 800 volts 800 volts
PD 45000 milliwatts 45000 milliwatts 45000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 C (-67 F)
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