STMicroelectronics, Inc. Single FETs, MOSFETs STD1NK60-1

MOSFET N-CH 600V 1A IPAK

Manufacturer: STMicroelectronics
Win Source Part Number: 066307-STD1NK60-1
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 30W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: I-Pak
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 1A (Tc)
Gate-Source Threshold Voltage: 3.7V @ 250μA
Max Gate Charge: 10nC @ 10V
Max Input Capacitance: 156pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 8.5 Ohm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Balance
Quantity per package: 75

MOSFET N-Channel 600V 1A IPAK

MOSFET N-Channel 600V 1A IPAK

600V 1A N-CH MOSFET, 8R RdsOn, IPAK, SuperMESH Product overview: STD1NK60-1 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 1A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STD1NK60-1 can be used for catalog matching and distributor lookup.

N-Channel 600V 1A (Tc) 30W (Tc) Through Hole I-PAK