STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD1HN60K3 STD1HN60K3

Description
Manufacturer: STMicroelectronics Win Source Part Number: 1102859-STD1HN60K3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 27W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 1.2A (Tc) Gate-Source Threshold Voltage: 4.5V @ 50μA Max Gate Charge: 9.5nC @ 10V Max Input Capacitance: 140pF @ 50V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 8 Ohm @ 600mA, 10V Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Balance
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 1102859-STD1HN60K3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 27W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 1.2A (Tc) Gate-Source Threshold Voltage: 4.5V @ 50μA Max Gate Charge: 9.5nC @ 10V Max Input Capacitance: 140pF @ 50V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 8 Ohm @ 600mA, 10V Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD1HN60K3 - 1102859-STD1HN60K3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD1HN60K3
1102859-STD1HN60K3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD1HN60K3 1102859-STD1HN60K3
Manufacturer: STMicroelectronics Win Source Part Number: 1102859-STD1HN60K3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 27W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 1.2A (Tc) Gate-Source Threshold Voltage: 4.5V @ 50μA Max Gate Charge: 9.5nC @ 10V Max Input Capacitance: 140pF @ 50V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 8 Ohm @ 600mA, 10V Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 1102859-STD1HN60K3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 27W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 1.2A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 50μA
Max Gate Charge: 9.5nC @ 10V
Max Input Capacitance: 140pF @ 50V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 8 Ohm @ 600mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - 497-STD1HN60K3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-STD1HN60K3DKR-ND
Single FETs, MOSFETs 497-STD1HN60K3DKR-ND
N-Channel 600V 1.2A (Tc) 27W (Tc) Surface Mount DPAK

N-Channel 600V 1.2A (Tc) 27W (Tc) Surface Mount DPAK

Buy Now Datasheet
Single FETs, MOSFETs - 497-STD1HN60K3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-STD1HN60K3TR-ND
Single FETs, MOSFETs 497-STD1HN60K3TR-ND
N-Channel 600V 1.2A (Tc) 27W (Tc) Surface Mount DPAK

N-Channel 600V 1.2A (Tc) 27W (Tc) Surface Mount DPAK

Buy Now Datasheet
Single FETs, MOSFETs - 497-STD1HN60K3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-STD1HN60K3CT-ND
Single FETs, MOSFETs 497-STD1HN60K3CT-ND
N-Channel 600V 1.2A (Tc) 27W (Tc) Surface Mount DPAK

N-Channel 600V 1.2A (Tc) 27W (Tc) Surface Mount DPAK

Buy Now Datasheet
Singapore
SMD 600V 1.2A 6.7 Ohm MOSFET Transistor
278-STD1HN60K3
SMD 600V 1.2A 6.7 Ohm MOSFET Transistor 278-STD1HN60K3
600V N-CH MOSFET, 1.2A, 6.7 Ohm, DPAK, Surface Mount Product overview: STD1HN60K3 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 600V, 1.2A, 6.7 Ohm, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 600V, 1.2A, 6.7 Ohm, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STD1HN60K3 can be used for catalog matching and distributor lookup.

600V N-CH MOSFET, 1.2A, 6.7 Ohm, DPAK, Surface Mount Product overview: STD1HN60K3 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 600V, 1.2A, 6.7 Ohm, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 600V, 1.2A, 6.7 Ohm, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STD1HN60K3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET N-Ch 600V 6.4Ohm 1.2A SuperMESH3 FET

MOSFET N-Ch 600V 6.4Ohm 1.2A SuperMESH3 FET

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STD1HN60K3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STD1HN60K3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STD1HN60K3
MOSFET N-CH 600V 1.2A DPAK

MOSFET N-CH 600V 1.2A DPAK

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1102859-STD1HN60K3 497-STD1HN60K3DKR-ND 278-STD1HN60K3 STD1HN60K3 STD1HN60K3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD1HN60K3 Single FETs, MOSFETs SMD 600V 1.2A 6.7 Ohm MOSFET Transistor MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 600 volts
PD 27000 milliwatts 27000 milliwatts
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