STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD1HN60K3 STD1HN60K3

Description
Manufacturer: STMicroelectronics Win Source Part Number: 1102859-STD1HN60K3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 27W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 1.2A (Tc) Gate-Source Threshold Voltage: 4.5V @ 50μA Max Gate Charge: 9.5nC @ 10V Max Input Capacitance: 140pF @ 50V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 8 Ohm @ 600mA, 10V Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Balance
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 1102859-STD1HN60K3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 27W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 1.2A (Tc) Gate-Source Threshold Voltage: 4.5V @ 50μA Max Gate Charge: 9.5nC @ 10V Max Input Capacitance: 140pF @ 50V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 8 Ohm @ 600mA, 10V Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Balance
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Suppliers

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Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD1HN60K3 - 1102859-STD1HN60K3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD1HN60K3
1102859-STD1HN60K3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD1HN60K3 1102859-STD1HN60K3
Manufacturer: STMicroelectronics Win Source Part Number: 1102859-STD1HN60K3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 27W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 1.2A (Tc) Gate-Source Threshold Voltage: 4.5V @ 50μA Max Gate Charge: 9.5nC @ 10V Max Input Capacitance: 140pF @ 50V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 8 Ohm @ 600mA, 10V Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 1102859-STD1HN60K3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 27W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 1.2A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 50μA
Max Gate Charge: 9.5nC @ 10V
Max Input Capacitance: 140pF @ 50V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 8 Ohm @ 600mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - 497-STD1HN60K3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-STD1HN60K3TR-ND
Single FETs, MOSFETs 497-STD1HN60K3TR-ND
N-Channel 600V 1.2A (Tc) 27W (Tc) Surface Mount DPAK

N-Channel 600V 1.2A (Tc) 27W (Tc) Surface Mount DPAK

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Single FETs, MOSFETs - 497-STD1HN60K3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-STD1HN60K3DKR-ND
Single FETs, MOSFETs 497-STD1HN60K3DKR-ND
N-Channel 600V 1.2A (Tc) 27W (Tc) Surface Mount DPAK

N-Channel 600V 1.2A (Tc) 27W (Tc) Surface Mount DPAK

Buy Now Datasheet
Single FETs, MOSFETs - 497-STD1HN60K3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-STD1HN60K3CT-ND
Single FETs, MOSFETs 497-STD1HN60K3CT-ND
N-Channel 600V 1.2A (Tc) 27W (Tc) Surface Mount DPAK

N-Channel 600V 1.2A (Tc) 27W (Tc) Surface Mount DPAK

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Sheung Wan, Hong Kong
MOSFET N-Ch 600V 6.4Ohm 1.2A SuperMESH3 FET

MOSFET N-Ch 600V 6.4Ohm 1.2A SuperMESH3 FET

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STD1HN60K3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STD1HN60K3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STD1HN60K3
MOSFET N-CH 600V 1.2A DPAK

MOSFET N-CH 600V 1.2A DPAK

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1102859-STD1HN60K3 497-STD1HN60K3TR-ND STD1HN60K3 STD1HN60K3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD1HN60K3 Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 600 volts
PD 27000 milliwatts
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