N-Channel 600V 11A (Tc) 110W (Tc) Surface Mount DPAK
N-Channel 600V 11A (Tc) 110W (Tc) Surface Mount DPAK
N-Channel 600V 11A (Tc) 110W (Tc) Surface Mount DPAK
Manufacturer: STMicroelectronics
Win Source Part Number: 935273-STD15N60M2-EP
Series: MDmesh™ M2-EP
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 600 V 11A (Tc) 110W (Tc) Surface Mount DPAK
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Package: Reel - TR
Mounting: Surface Mount
Family Name: STD15
Categories: Discrete Semiconductor Products
Case / Package: DPAK
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Balance
Quantity per package: 2500
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 37 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: 497-15899-1, 497-15899-2, 497-15899-6
MOSFET N-CH 600V 11A DPAK
N-channel 600 V, 0.340 Ohm typ., 11 A MDmesh M2 EP Power MOSFET in a DPAK package Product overview: STD15N60M2-EP from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600 V, 0.340 Ohm, 11 A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600 V, 0.340 Ohm, 11 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STD15N60M2-EP can be used for catalog matching and distributor lookup.
MOSFET, N-CH, 600V, 11A, TO-252; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:11A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
MOSFET N-CH 600V 11A DPAK
| DigiKey | Win Source Electronics | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 497-15899-1-ND | 935273-STD15N60M2-EP | STD15N60M2-EP | 278-STD15N60M2-EP | 61AC2088 | STD15N60M2-EP |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD15N60M2-EP | Single FETs, MOSFETs | N-Channel 600 V 0.340 Ohm 11 A MOSFET Transistor | Mosfet, N-Ch, 600V, 11A, To-252; Channel Type Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | |||
| Package Type | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | SOT3; DPAK | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-3 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
