STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD155N3LH6 STD155N3LH6

Description
Manufacturer: STMicroelectronics Win Source Part Number: 1102855-STD155N3LH6 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 110W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 80nC @ 5V Max Input Capacitance: 3800pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3 mOhm @ 40A, 10V Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet
Description
Manufacturer: STMicroelectronics Win Source Part Number: 1102855-STD155N3LH6 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 110W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 80nC @ 5V Max Input Capacitance: 3800pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3 mOhm @ 40A, 10V Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD155N3LH6 - 1102855-STD155N3LH6 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD155N3LH6
1102855-STD155N3LH6
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD155N3LH6 1102855-STD155N3LH6
Manufacturer: STMicroelectronics Win Source Part Number: 1102855-STD155N3LH6 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 110W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 80nC @ 5V Max Input Capacitance: 3800pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3 mOhm @ 40A, 10V Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Sufficient

Manufacturer: STMicroelectronics
Win Source Part Number: 1102855-STD155N3LH6
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 110W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 80A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 80nC @ 5V
Max Input Capacitance: 3800pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3 mOhm @ 40A, 10V
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - 497-11308-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-11308-2-ND
Single FETs, MOSFETs 497-11308-2-ND
N-Channel 30V 80A (Tc) 110W (Tc) Surface Mount D-PAK (TO-252)

N-Channel 30V 80A (Tc) 110W (Tc) Surface Mount D-PAK (TO-252)

Buy Now Datasheet
Single FETs, MOSFETs - 497-11308-1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-11308-1-ND
Single FETs, MOSFETs 497-11308-1-ND
N-Channel 30V 80A (Tc) 110W (Tc) Surface Mount D-PAK (TO-252)

N-Channel 30V 80A (Tc) 110W (Tc) Surface Mount D-PAK (TO-252)

Buy Now Datasheet
Single FETs, MOSFETs - 497-11308-6-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-11308-6-ND
Single FETs, MOSFETs 497-11308-6-ND
N-Channel 30V 80A (Tc) 110W (Tc) Surface Mount D-PAK (TO-252)

N-Channel 30V 80A (Tc) 110W (Tc) Surface Mount D-PAK (TO-252)

Buy Now Datasheet
Transistor - 38972597 - Radwell International
Willingboro, NJ, United States
Transistor
38972597
Transistor 38972597
POWER FIELD-EFFECT TRANSISTOR, 80A I(D), 30V, 0.004OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB, D2PAK, MARKING: 155N3LH6. FREE 2 YEAR RADWELL WARRANTY

POWER FIELD-EFFECT TRANSISTOR, 80A I(D), 30V, 0.004OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB, D2PAK, MARKING: 155N3LH6. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Single FETs, MOSFETs - STD155N3LH6 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STD155N3LH6
Single FETs, MOSFETs STD155N3LH6
MOSFET N-CH 30V 80A DPAK

MOSFET N-CH 30V 80A DPAK

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STD155N3LH6 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STD155N3LH6
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STD155N3LH6
MOSFET N-CH 30V 80A DPAK

MOSFET N-CH 30V 80A DPAK

Supplier's Site
Mosfet, N Ch, 30V, 80A, To-252; Channel Type Stmicroelectronics - 47T9196 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Ch, 30V, 80A, To-252; Channel Type Stmicroelectronics
47T9196
Mosfet, N Ch, 30V, 80A, To-252; Channel Type Stmicroelectronics 47T9196
MOSFET, N CH, 30V, 80A, TO-252; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:80A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V; Product Range:-RoHS Compliant: Yes

MOSFET, N CH, 30V, 80A, TO-252; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:80A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V; Product Range:-RoHS Compliant: Yes

Supplier's Site
Sheung Wan, Hong Kong
MOSFET Nchannel 30 V 0.0024 Ohm80A DPAK STripFET

MOSFET Nchannel 30 V 0.0024 Ohm80A DPAK STripFET

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey Radwell International ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1102855-STD155N3LH6 497-11308-2-ND 38972597 STD155N3LH6 STD155N3LH6 47T9196 STD155N3LH6
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD155N3LH6 Single FETs, MOSFETs Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N Ch, 30V, 80A, To-252; Channel Type Stmicroelectronics MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 30 volts 30 volts
PD 110000 milliwatts 110000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Unlock Full Specs
to access all available technical data

Similar Products

GaAs Fet Switches - KS209 - Micross Components, Inc.
Micross Components, Inc.
Specs
Operating Frequency 20 to 3000 MHz
View Details
Single FETs, MOSFETs - 94-3250TR-ND - DigiKey
Infineon Technologies AG
Specs
Polarity N-Channel
Package Type DirectFET™ Isometric MQ
View Details
2 suppliers