STMicroelectronics, Inc. Single FETs, MOSFETs STD150NH02L-1

Description
N-Channel 24V 150A (Tc) 125W (Tc) Through Hole I-PAK
Request a Quote Datasheet
Description
N-Channel 24V 150A (Tc) 125W (Tc) Through Hole I-PAK
Request a Quote Datasheet

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Single FETs, MOSFETs - STD150NH02L-1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
STD150NH02L-1-ND
Single FETs, MOSFETs STD150NH02L-1-ND
N-Channel 24V 150A (Tc) 125W (Tc) Through Hole I-PAK

N-Channel 24V 150A (Tc) 125W (Tc) Through Hole I-PAK

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD150NH02L-1 - 1102853-STD150NH02L-1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD150NH02L-1
1102853-STD150NH02L-1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD150NH02L-1 1102853-STD150NH02L-1
Manufacturer: STMicroelectronics Win Source Part Number: 1102853-STD150NH02L- 1 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 125W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: I-Pak Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 24V Continuous Drain Current at 25°C: 150A (Tc) Gate-Source Threshold Voltage: 1.8V @ 250μA Max Gate Charge: 93nC @ 10V Max Input Capacitance: 4450pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.5 mOhm @ 75A, 10V Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 1102853-STD150NH02L-1
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 125W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: I-Pak
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 24V
Continuous Drain Current at 25°C: 150A (Tc)
Gate-Source Threshold Voltage: 1.8V @ 250μA
Max Gate Charge: 93nC @ 10V
Max Input Capacitance: 4450pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.5 mOhm @ 75A, 10V
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STD150NH02L-1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STD150NH02L-1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STD150NH02L-1
MOSFET N-CH 24V 150A IPAK

MOSFET N-CH 24V 150A IPAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number STD150NH02L-1-ND 1102853-STD150NH02L-1 STD150NH02L-1
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD150NH02L-1 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-251-3 Short Leads, IPAK, TO-251AA SOT3; I-Pak TO-251-3 Short Leads, IPak, TO-251AA
V(BR)DSS 24 volts
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