Manufacturer: STMicroelectronics
Win Source Part Number: 031114-STD150N3LLH6
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 110W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: 175°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 80A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 29nC @ 4.5V
Max Input Capacitance: 3700pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.8 mOhm @ 40A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Limited
N-Channel 30V 80A (Tc) 110W (Tc) Surface Mount DPAK
MOSFET N-CH 30V 80A DPAK
N CHANNEL MOSFET, STripFET VI DeepGATE, 30V, 80A, DPAK; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:80A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:110W RoHS Compliant: Yes
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 031114-STD150N3LLH6 | 497-8889-2-ND | STD150N3LLH6 | 09R5829 | STD150N3LLH6 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD150N3LLH6 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | N Channel Mosfet, Stripfet Vi Deepgate, 30V, 80A, Dpak; Channel Type Stmicroelectronics | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | ||
| V(BR)DSS | 30 volts | ||||
| PD | 110000 milliwatts | 110000 milliwatts | |||
| TJ | 175 C (347 F) |
