STMicroelectronics, Inc. Single FETs, MOSFETs STD150N3LLH6

Description
N-Channel 30V 80A (Tc) 110W (Tc) Surface Mount DPAK
Request a Quote Datasheet
Description
N-Channel 30V 80A (Tc) 110W (Tc) Surface Mount DPAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 497-8889-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-8889-2-ND
Single FETs, MOSFETs 497-8889-2-ND
N-Channel 30V 80A (Tc) 110W (Tc) Surface Mount DPAK

N-Channel 30V 80A (Tc) 110W (Tc) Surface Mount DPAK

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD150N3LLH6 - 031114-STD150N3LLH6 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD150N3LLH6
031114-STD150N3LLH6
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD150N3LLH6 031114-STD150N3LLH6
Manufacturer: STMicroelectronics Win Source Part Number: 031114-STD150N3LLH6 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 110W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: 175°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 29nC @ 4.5V Max Input Capacitance: 3700pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.8 mOhm @ 40A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 031114-STD150N3LLH6
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 110W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: 175°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 80A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 29nC @ 4.5V
Max Input Capacitance: 3700pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.8 mOhm @ 40A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET POWER MOSFET

MOSFET POWER MOSFET

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STD150N3LLH6 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STD150N3LLH6
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STD150N3LLH6
MOSFET N-CH 30V 80A DPAK

MOSFET N-CH 30V 80A DPAK

Supplier's Site
N Channel Mosfet, Stripfet Vi Deepgate, 30V, 80A, Dpak; Channel Type Stmicroelectronics - 09R5829 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, Stripfet Vi Deepgate, 30V, 80A, Dpak; Channel Type Stmicroelectronics
09R5829
N Channel Mosfet, Stripfet Vi Deepgate, 30V, 80A, Dpak; Channel Type Stmicroelectronics 09R5829
N CHANNEL MOSFET, STripFET VI DeepGATE, 30V, 80A, DPAK; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:80A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:110W RoHS Compliant: Yes

N CHANNEL MOSFET, STripFET VI DeepGATE, 30V, 80A, DPAK; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:80A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:110W RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 497-8889-2-ND 031114-STD150N3LLH6 STD150N3LLH6 STD150N3LLH6 09R5829
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD150N3LLH6 MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs N Channel Mosfet, Stripfet Vi Deepgate, 30V, 80A, Dpak; Channel Type Stmicroelectronics
Polarity N-Channel N-Channel; N-Channel N-Channel
Package Type TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 SOT3; TO-252 (DPAK); D-Pak TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 TO-3; TO-252 (DPAK)
V(BR)DSS 30 volts
PD 110000 milliwatts 110000 milliwatts
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