Manufacturer: STMicroelectronics
Win Source Part Number: 031113-STD14NM50N
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 90W (Tc)
Family Name: STD14NM50N
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 12A (Tc)
Gate-Source Threshold Voltage: 4V @ 100μA
Max Gate Charge: 27nC @ 10V
Max Input Capacitance: 816pF @ 50V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 320 mOhm @ 6A, 10V
Alternative Parts (Cross-Reference): SiHD12N50E-GE3; IPD50R280CEATMA1; IPD50R280CEBTMA1;
Introduction Date: November 26, 2009
ECCN: EAR99
Country of Origin: China
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Balance
N-Channel 500V 12A (Tc) 90W (Tc) Surface Mount DPAK
MOSFET, N CH, 500V, 12A, TO-252; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:12A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
MOSFET N-CH 500V 12A DPAK
MOSFET N-Ch 500V 0.246 ohm 12 A MDmesh II
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | STD14NM50N | 031113-STD14NM50N | 497-10646-2-ND | 90R9205 | STD14NM50N | STD14NM50N |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD14NM50N | Single FETs, MOSFETs | Mosfet, N Ch, 500V, 12A, To-252; Channel Type Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 500 volts | 500 volts | ||||
| IDSS | 12000 milliamps | 12000 milliamps | ||||
| PD | 90000 milliwatts | 90000 milliwatts |
