N-Channel 600V 11A (Tc) 109W (Tc) Surface Mount DPAK
N-Channel 600V 11A (Tc) 109W (Tc) Surface Mount DPAK
N-Channel 600V 11A (Tc) 109W (Tc) Surface Mount DPAK
600V 11A N-CH MOSFET DPAK, 380mR RdsOn Product overview: STD13NM60ND from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 11A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 11A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STD13NM60ND can be used for catalog matching and distributor lookup.
Power MOSFET Nchannel FDmesh II 600V 11A
Power MOSFET Nchannel FDmesh II 600V 11A
Power MOSFET Nchannel FDmesh II 600V 11A
Manufacturer: STMicroelectronics
Win Source Part Number: 1102852-STD13NM60ND
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 109W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 11A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 24.5nC @ 10V
Max Input Capacitance: 845pF @ 50V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 380 mOhm @ 5.5A, 10V
Alternative Parts (Cross-Reference): IPD65R420CFD; IPD65R420CFDATMA1; R6010MND3TL; STD13NM60ND;
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance
Quantity per package: 2,500
MOSFET N-CH 600V 11A DPAK
MOSFET N-CH 600V 0.32Ohm 11A MDmesh II Plus
MOSFET N-CH 600V 11A DPAK
MOSFET, N-CH, 600V, 11A, 109W, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.32ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes
| DigiKey | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | RS Components, Ltd. | Win Source Electronics | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 497-13863-6-ND | 278-STD13NM60ND | 7919285 | 7919285P | 1102852-STD13NM60ND | STD13NM60ND | STD13NM60ND | STD13NM60ND | 07AH6954 |
| Product Name | Single FETs, MOSFETs | 600V 11A DPAK MOSFET Transistor | MOSFETs | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD13NM60ND | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 600V, 11A, 109W, To-252; Transistor Polarity Stmicroelectronics |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | ||||
| Package Type | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252 (DPAK); Dpak (to-252) | TO-252 (DPAK); TO-252 | SOT3; TO-252 (DPAK); DPAK | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-3; TO-252 (DPAK) | ||
| PD | 109000 milliwatts | 109000 milliwatts | 109000 milliwatts | ||||||
| TJ | -55 C (-67 F) | 150 C (302 F) | 150 C (302 F) | ||||||
| MOSFET Operating Mode | Enhancement |
