STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD13N60M2 STD13N60M2

Description
Manufacturer: STMicroelectronics Win Source Part Number: 131130-STD13N60M2 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 110W (Tc) Family Name: STD13N60M2 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 11A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 17nC @ 10V Max Input Capacitance: 580pF @ 100V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 380 mOhm @ 5.5A, 10V Alternative Parts (Cross-Reference): IPD60R450E6XT; NDD60N360U1T4G; IPD60R450E6; IPD65R420CFDBTMA1; ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2031 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Limited
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 131130-STD13N60M2 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 110W (Tc) Family Name: STD13N60M2 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 11A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 17nC @ 10V Max Input Capacitance: 580pF @ 100V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 380 mOhm @ 5.5A, 10V Alternative Parts (Cross-Reference): IPD60R450E6XT; NDD60N360U1T4G; IPD60R450E6; IPD65R420CFDBTMA1; ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2031 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD13N60M2 - 131130-STD13N60M2 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD13N60M2
131130-STD13N60M2
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD13N60M2 131130-STD13N60M2
Manufacturer: STMicroelectronics Win Source Part Number: 131130-STD13N60M2 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 110W (Tc) Family Name: STD13N60M2 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 11A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 17nC @ 10V Max Input Capacitance: 580pF @ 100V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 380 mOhm @ 5.5A, 10V Alternative Parts (Cross-Reference): IPD60R450E6XT; NDD60N360U1T4G; IPD60R450E6; IPD65R420CFDBTMA1; ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2031 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 131130-STD13N60M2
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 110W (Tc)
Family Name: STD13N60M2
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 11A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 17nC @ 10V
Max Input Capacitance: 580pF @ 100V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 380 mOhm @ 5.5A, 10V
Alternative Parts (Cross-Reference): IPD60R450E6XT; NDD60N360U1T4G; IPD60R450E6; IPD65R420CFDBTMA1;
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2031
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - STD13N60M2 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STD13N60M2
Single FETs, MOSFETs STD13N60M2
MOSFET N-CH 600V 11A DPAK

MOSFET N-CH 600V 11A DPAK

Supplier's Site Datasheet
Single FETs, MOSFETs - 497-13862-1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-13862-1-ND
Single FETs, MOSFETs 497-13862-1-ND
N-Channel 600V 11A (Tc) 110W (Tc) Surface Mount DPAK

N-Channel 600V 11A (Tc) 110W (Tc) Surface Mount DPAK

Buy Now Datasheet
Single FETs, MOSFETs - 497-13862-6-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-13862-6-ND
Single FETs, MOSFETs 497-13862-6-ND
N-Channel 600V 11A (Tc) 110W (Tc) Surface Mount DPAK

N-Channel 600V 11A (Tc) 110W (Tc) Surface Mount DPAK

Buy Now Datasheet
Single FETs, MOSFETs - 497-13862-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-13862-2-ND
Single FETs, MOSFETs 497-13862-2-ND
N-Channel 600V 11A (Tc) 110W (Tc) Surface Mount DPAK

N-Channel 600V 11A (Tc) 110W (Tc) Surface Mount DPAK

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET N-CH 600V 0.35Ohm 11A Mdmesh M2

MOSFET N-CH 600V 0.35Ohm 11A Mdmesh M2

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STD13N60M2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STD13N60M2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STD13N60M2
MOSFET N-CH 600V 11A DPAK

MOSFET N-CH 600V 11A DPAK

Supplier's Site
MOSFET N-CH 600V 11A DPAK - 761-STD13N60M2 - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 600V 11A DPAK
761-STD13N60M2
MOSFET N-CH 600V 11A DPAK 761-STD13N60M2
MOSFET N-CH 600V 11A DPAK

MOSFET N-CH 600V 11A DPAK

Supplier's Site
Mosfet, N-Ch, 600V, 11A, 110W, To-252; Transistor Polarity Stmicroelectronics - 07AH6955 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 600V, 11A, 110W, To-252; Transistor Polarity Stmicroelectronics
07AH6955
Mosfet, N-Ch, 600V, 11A, 110W, To-252; Transistor Polarity Stmicroelectronics 07AH6955
MOSFET, N-CH, 600V, 11A, 110W, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.35ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes

MOSFET, N-CH, 600V, 11A, 110W, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.35ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 131130-STD13N60M2 STD13N60M2 497-13862-1-ND STD13N60M2 STD13N60M2 761-STD13N60M2 07AH6955
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD13N60M2 Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET N-CH 600V 11A DPAK Mosfet, N-Ch, 600V, 11A, 110W, To-252; Transistor Polarity Stmicroelectronics
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 600 volts 600 volts 650 volts
PD 110000 milliwatts 110000 milliwatts 110000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; TO-252 (DPAK); DPAK TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 TO-3; TO-252 (DPAK)
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