MOSFET N-CH 600V 11A DPAK
Manufacturer: STMicroelectronics
Win Source Part Number: 131130-STD13N60M2
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 110W (Tc)
Family Name: STD13N60M2
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 11A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 17nC @ 10V
Max Input Capacitance: 580pF @ 100V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 380 mOhm @ 5.5A, 10V
Alternative Parts (Cross-Reference): IPD60R450E6XT; NDD60N360U1T4G; IPD60R450E6; IPD65R420CFDBTMA1;
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2031
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Limited
N-Channel 600V 11A (Tc) 110W (Tc) Surface Mount DPAK
N-Channel 600V 11A (Tc) 110W (Tc) Surface Mount DPAK
N-Channel 600V 11A (Tc) 110W (Tc) Surface Mount DPAK
600V 11A N-CH MOSFET DPAK, 380mR Rds(on) Product overview: STD13N60M2 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 11A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 11A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STD13N60M2 can be used for catalog matching and distributor lookup.
MOSFET N-CH 600V 0.35Ohm 11A Mdmesh M2
MOSFET, N-CH, 600V, 11A, 110W, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.35ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes
MOSFET N-CH 600V 11A DPAK
MOSFET N-CH 600V 11A DPAK
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | STD13N60M2 | 131130-STD13N60M2 | 497-13862-1-ND | 278-STD13N60M2 | STD13N60M2 | 07AH6955 | STD13N60M2 | 761-STD13N60M2 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD13N60M2 | Single FETs, MOSFETs | 600V 11A DPAK MOSFET Transistor | MOSFET | Mosfet, N-Ch, 600V, 11A, 110W, To-252; Transistor Polarity Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET N-CH 600V 11A DPAK |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | SILICON | ||||||
| V(BR)DSS | 600 volts | 600 volts | 650 volts | |||||
| IDSS | 11000 milliamps | 11000 milliamps | ||||||
| PD | 110000 milliwatts | 110000 milliwatts | 110000 milliwatts | 110000 milliwatts |
