STMicroelectronics, Inc. Single FETs, MOSFETs STD130N6F7

Description
MOSFET N-CHANNEL 60V 80A DPAK
Request a Quote Datasheet
Description
MOSFET N-CHANNEL 60V 80A DPAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - STD130N6F7 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STD130N6F7
Single FETs, MOSFETs STD130N6F7
MOSFET N-CHANNEL 60V 80A DPAK

MOSFET N-CHANNEL 60V 80A DPAK

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD130N6F7 - 1102851-STD130N6F7 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD130N6F7
1102851-STD130N6F7
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD130N6F7 1102851-STD130N6F7
Manufacturer: STMicroelectronics Win Source Part Number: 1102851-STD130N6F7 Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 134W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 42nC @ 10V Max Input Capacitance: 2600pF @ 30V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5 mOhm @ 40A, 10V Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Limited Application Field: Used in Alternative Energy, Power Management, Portable Devices, Sensing & Instrumentation

Manufacturer: STMicroelectronics
Win Source Part Number: 1102851-STD130N6F7
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 134W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 80A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 42nC @ 10V
Max Input Capacitance: 2600pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5 mOhm @ 40A, 10V
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Limited
Application Field: Used in Alternative Energy, Power Management, Portable Devices, Sensing & Instrumentation

Buy Now Datasheet
Single FETs, MOSFETs - 497-17305-1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-17305-1-ND
Single FETs, MOSFETs 497-17305-1-ND
N-Channel 60V 80A (Tc) 134W (Tc) Surface Mount DPAK

N-Channel 60V 80A (Tc) 134W (Tc) Surface Mount DPAK

Buy Now Datasheet
Single FETs, MOSFETs - 497-17305-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-17305-2-ND
Single FETs, MOSFETs 497-17305-2-ND
N-Channel 60V 80A (Tc) 134W (Tc) Surface Mount DPAK

N-Channel 60V 80A (Tc) 134W (Tc) Surface Mount DPAK

Buy Now Datasheet
Single FETs, MOSFETs - 497-17305-6-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-17305-6-ND
Single FETs, MOSFETs 497-17305-6-ND
N-Channel 60V 80A (Tc) 134W (Tc) Surface Mount DPAK

N-Channel 60V 80A (Tc) 134W (Tc) Surface Mount DPAK

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET N-channel 60 V, 4.2 mOhm typ., 80 A STripFET F7 Power MOSFET in DPAK package

MOSFET N-channel 60 V, 4.2 mOhm typ., 80 A STripFET F7 Power MOSFET in DPAK package

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STD130N6F7 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STD130N6F7
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STD130N6F7
MOSFET N-CHANNEL 60V 80A DPAK

MOSFET N-CHANNEL 60V 80A DPAK

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number STD130N6F7 1102851-STD130N6F7 497-17305-1-ND STD130N6F7 STD130N6F7
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD130N6F7 Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 60 volts
IDSS 80000 milliamps
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