N-Channel 60V 80A (Tc) 134W (Tc) Surface Mount DPAK
N-Channel 60V 80A (Tc) 134W (Tc) Surface Mount DPAK
N-Channel 60V 80A (Tc) 134W (Tc) Surface Mount DPAK
N-channel 60 V, 4.2 mOhm typ., 80 A STripFET F7 Power MOSFET in DPAK package Product overview: STD130N6F7 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60 V, 4.2 mOhm, 80 A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60 V, 4.2 mOhm, 80 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STD130N6F7 can be used for catalog matching and distributor lookup.
Manufacturer: STMicroelectronics
Win Source Part Number: 1102851-STD130N6F7
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 134W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 80A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 42nC @ 10V
Max Input Capacitance: 2600pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5 mOhm @ 40A, 10V
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Limited
Application Field: Used in Alternative Energy, Power Management, Portable Devices, Sensing & Instrumentation
MOSFET N-CHANNEL 60V 80A DPAK
MOSFET N-CHANNEL 60V 80A DPAK
MOSFET N-channel 60 V, 4.2 mOhm typ., 80 A STripFET F7 Power MOSFET in DPAK package
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 497-17305-6-ND | 278-STD130N6F7 | 1102851-STD130N6F7 | STD130N6F7 | STD130N6F7 | STD130N6F7 |
| Product Name | Single FETs, MOSFETs | N-Channel 60 V 4.2 mOhm 80 A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD130N6F7 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | |||
| Package Type | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | SOT3; TO-252 (DPAK); DPAK | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | ||
| Packing Method | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR | |||||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
