STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD130N6F7 STD130N6F7

Description
Manufacturer: STMicroelectronics Win Source Part Number: 1102851-STD130N6F7 Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 134W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 42nC @ 10V Max Input Capacitance: 2600pF @ 30V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5 mOhm @ 40A, 10V Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Limited Application Field: Used in Alternative Energy, Power Management, Portable Devices, Sensing & Instrumentation
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 1102851-STD130N6F7 Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 134W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 42nC @ 10V Max Input Capacitance: 2600pF @ 30V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5 mOhm @ 40A, 10V Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Limited Application Field: Used in Alternative Energy, Power Management, Portable Devices, Sensing & Instrumentation
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD130N6F7 - 1102851-STD130N6F7 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD130N6F7
1102851-STD130N6F7
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD130N6F7 1102851-STD130N6F7
Manufacturer: STMicroelectronics Win Source Part Number: 1102851-STD130N6F7 Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 134W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 42nC @ 10V Max Input Capacitance: 2600pF @ 30V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5 mOhm @ 40A, 10V Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Limited Application Field: Used in Alternative Energy, Power Management, Portable Devices, Sensing & Instrumentation

Manufacturer: STMicroelectronics
Win Source Part Number: 1102851-STD130N6F7
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 134W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 80A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 42nC @ 10V
Max Input Capacitance: 2600pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5 mOhm @ 40A, 10V
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Limited
Application Field: Used in Alternative Energy, Power Management, Portable Devices, Sensing & Instrumentation

Buy Now Datasheet
Single FETs, MOSFETs - STD130N6F7 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STD130N6F7
Single FETs, MOSFETs STD130N6F7
MOSFET N-CHANNEL 60V 80A DPAK

MOSFET N-CHANNEL 60V 80A DPAK

Supplier's Site Datasheet
Singapore
N-Channel 60 V 4.2 mOhm 80 A MOSFET Transistor
278-STD130N6F7
N-Channel 60 V 4.2 mOhm 80 A MOSFET Transistor 278-STD130N6F7
N-channel 60 V, 4.2 mOhm typ., 80 A STripFET F7 Power MOSFET in DPAK package Product overview: STD130N6F7 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60 V, 4.2 mOhm, 80 A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60 V, 4.2 mOhm, 80 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STD130N6F7 can be used for catalog matching and distributor lookup.

N-channel 60 V, 4.2 mOhm typ., 80 A STripFET F7 Power MOSFET in DPAK package Product overview: STD130N6F7 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60 V, 4.2 mOhm, 80 A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60 V, 4.2 mOhm, 80 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STD130N6F7 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - 497-17305-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-17305-2-ND
Single FETs, MOSFETs 497-17305-2-ND
N-Channel 60V 80A (Tc) 134W (Tc) Surface Mount DPAK

N-Channel 60V 80A (Tc) 134W (Tc) Surface Mount DPAK

Buy Now Datasheet
Single FETs, MOSFETs - 497-17305-1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-17305-1-ND
Single FETs, MOSFETs 497-17305-1-ND
N-Channel 60V 80A (Tc) 134W (Tc) Surface Mount DPAK

N-Channel 60V 80A (Tc) 134W (Tc) Surface Mount DPAK

Buy Now Datasheet
Single FETs, MOSFETs - 497-17305-6-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-17305-6-ND
Single FETs, MOSFETs 497-17305-6-ND
N-Channel 60V 80A (Tc) 134W (Tc) Surface Mount DPAK

N-Channel 60V 80A (Tc) 134W (Tc) Surface Mount DPAK

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET N-channel 60 V, 4.2 mOhm typ., 80 A STripFET F7 Power MOSFET in DPAK package

MOSFET N-channel 60 V, 4.2 mOhm typ., 80 A STripFET F7 Power MOSFET in DPAK package

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STD130N6F7 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STD130N6F7
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STD130N6F7
MOSFET N-CHANNEL 60V 80A DPAK

MOSFET N-CHANNEL 60V 80A DPAK

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1102851-STD130N6F7 STD130N6F7 278-STD130N6F7 497-17305-2-ND STD130N6F7 STD130N6F7
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD130N6F7 Single FETs, MOSFETs N-Channel 60 V 4.2 mOhm 80 A MOSFET Transistor Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
Package Type SOT3; TO-252 (DPAK); DPAK TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 60 volts
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