MOSFET N-CH 60V 12A IPAK
N-Ch MOSFET, 60V, 12A, 100mR RdsOn, IPAK Product overview: STD12NF06L-1 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 12A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 12A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STD12NF06L-1 can be used for catalog matching and distributor lookup.
Manufacturer: STMicroelectronics
Win Source Part Number: 092602-STD12NF06L-1
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 42.8W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: I-Pak
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 12A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 10nC @ 5V
Max Input Capacitance: 350pF @ 25V
Maximum Gate-Source Voltage: ±16V
Maximum Rds On at Id,Vgs: 100 mOhm @ 6A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Balance
N-Channel 60V 12A (Tc) 42.8W (Tc) Through Hole I-PAK
MOSFET, N-CH, 60V, 12A, TO-252-3 (IPAK). FREE 2 YEAR RADWELL WARRANTY
MOSFET N-CH 60V 12A IPAK
MOSFET, N-CH, 60V, 12A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.06ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation RoHS Compliant: Yes
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Radwell International | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | STD12NF06L-1 | 278-STD12NF06L-1 | 092602-STD12NF06L-1 | 497-6730-5-ND | STD12NF06L-1 | 49035768 | STD12NF06L-1 | 98Y2469 |
| Product Name | Single FETs, MOSFETs | 60V 12A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD12NF06L-1 | Single FETs, MOSFETs | MOSFET | Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 60V, 12A, To-252-3; Transistor Polarity Stmicroelectronics |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 60 volts | 60 volts | ||||||
| IDSS | 12000 milliamps | 12000 milliamps | ||||||
| PD | 42800 milliwatts | 30000 milliwatts | 42800 milliwatts |
