STMicroelectronics, Inc. Single FETs, MOSFETs STD12NF06L-1

Description
N-Channel 60V 12A (Tc) 42.8W (Tc) Through Hole I-PAK
Request a Quote Datasheet
Description
N-Channel 60V 12A (Tc) 42.8W (Tc) Through Hole I-PAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 497-6730-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-6730-5-ND
Single FETs, MOSFETs 497-6730-5-ND
N-Channel 60V 12A (Tc) 42.8W (Tc) Through Hole I-PAK

N-Channel 60V 12A (Tc) 42.8W (Tc) Through Hole I-PAK

Buy Now Datasheet
Single FETs, MOSFETs - STD12NF06L-1 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STD12NF06L-1
Single FETs, MOSFETs STD12NF06L-1
MOSFET N-CH 60V 12A IPAK

MOSFET N-CH 60V 12A IPAK

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD12NF06L-1 - 092602-STD12NF06L-1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD12NF06L-1
092602-STD12NF06L-1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD12NF06L-1 092602-STD12NF06L-1
Manufacturer: STMicroelectronics Win Source Part Number: 092602-STD12NF06L-1 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 42.8W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: I-Pak Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 12A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 10nC @ 5V Max Input Capacitance: 350pF @ 25V Maximum Gate-Source Voltage: ±16V Maximum Rds On at Id,Vgs: 100 mOhm @ 6A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 092602-STD12NF06L-1
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 42.8W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: I-Pak
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 12A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 10nC @ 5V
Max Input Capacitance: 350pF @ 25V
Maximum Gate-Source Voltage: ±16V
Maximum Rds On at Id,Vgs: 100 mOhm @ 6A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Transistor - 49035768 - Radwell International
Willingboro, NJ, United States
Transistor
49035768
Transistor 49035768
MOSFET, N-CH, 60V, 12A, TO-252-3 (IPAK). FREE 2 YEAR RADWELL WARRANTY

MOSFET, N-CH, 60V, 12A, TO-252-3 (IPAK). FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-Ch 60 Volt 12 Amp

MOSFET N-Ch 60 Volt 12 Amp

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STD12NF06L-1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STD12NF06L-1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STD12NF06L-1
MOSFET N-CH 60V 12A IPAK

MOSFET N-CH 60V 12A IPAK

Supplier's Site
Mosfet, N-Ch, 60V, 12A, To-252-3; Transistor Polarity Stmicroelectronics - 98Y2469 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 60V, 12A, To-252-3; Transistor Polarity Stmicroelectronics
98Y2469
Mosfet, N-Ch, 60V, 12A, To-252-3; Transistor Polarity Stmicroelectronics 98Y2469
MOSFET, N-CH, 60V, 12A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.06ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation RoHS Compliant: Yes

MOSFET, N-CH, 60V, 12A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.06ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  DigiKey ODG (Origin Data Global) Win Source Electronics Radwell International VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 497-6730-5-ND STD12NF06L-1 092602-STD12NF06L-1 49035768 STD12NF06L-1 STD12NF06L-1 98Y2469
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD12NF06L-1 Transistor MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 60V, 12A, To-252-3; Transistor Polarity Stmicroelectronics
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel
Package Type TO-251-3 Short Leads, IPAK, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA SOT3; I-Pak Through Hole TO-3
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 60 volts 60 volts
IDSS 12000 milliamps 12000 milliamps
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