STMicroelectronics, Inc. Single FETs, MOSFETs STD12NF06-1

Description
N-Channel 60V 12A (Tc) 30W (Tc) Through Hole I-PAK
Request a Quote Datasheet
Description
N-Channel 60V 12A (Tc) 30W (Tc) Through Hole I-PAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - STD12NF06-1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
STD12NF06-1-ND
Single FETs, MOSFETs STD12NF06-1-ND
N-Channel 60V 12A (Tc) 30W (Tc) Through Hole I-PAK

N-Channel 60V 12A (Tc) 30W (Tc) Through Hole I-PAK

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD12NF06-1 - 1102849-STD12NF06-1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD12NF06-1
1102849-STD12NF06-1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD12NF06-1 1102849-STD12NF06-1
Manufacturer: STMicroelectronics Win Source Part Number: 1102849-STD12NF06-1 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 30W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: I-Pak Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 12A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 12nC @ 10V Max Input Capacitance: 315pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 100 mOhm @ 6A, 10V Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Sufficient

Manufacturer: STMicroelectronics
Win Source Part Number: 1102849-STD12NF06-1
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 30W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: I-Pak
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 12A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 12nC @ 10V
Max Input Capacitance: 315pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 100 mOhm @ 6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STD12NF06-1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STD12NF06-1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STD12NF06-1
MOSFET N-CH 60V 12A IPAK

MOSFET N-CH 60V 12A IPAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number STD12NF06-1-ND 1102849-STD12NF06-1 STD12NF06-1
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD12NF06-1 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-251-3 Short Leads, IPAK, TO-251AA SOT3; I-Pak TO-251-3 Short Leads, IPak, TO-251AA
V(BR)DSS 60 volts
Unlock Full Specs
to access all available technical data

Similar Products

Single FETs, MOSFETs - AUIRFP2602-ND - DigiKey
Infineon Technologies AG
Specs
Polarity N-Channel
Package Type TO-247; TO-247-3
Transistor Grade / Operating Range Automotive
View Details
2 suppliers
1500 Watt, 65 Volt, 1.2 - 1.4 GHz, GaN RF Input-Matched Transistor - QPD1029L - Qorvo
Specs
Transistor Technology / Material 1500 Watt, 65 Volt, 1.2 - 1.4 GHz, GaN RF Input-Matched Transistor
Transistor Grade / Operating Range Military
Package Type NI-1230 (Eared)
View Details
2 suppliers