STMicroelectronics, Inc. Single FETs, MOSFETs STD12N65M5

Description
N-Channel 650V 8.5A (Tc) 70W (Tc) Surface Mount DPAK
Request a Quote Datasheet
Description
N-Channel 650V 8.5A (Tc) 70W (Tc) Surface Mount DPAK
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Single FETs, MOSFETs - 497-10568-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-10568-2-ND
Single FETs, MOSFETs 497-10568-2-ND
N-Channel 650V 8.5A (Tc) 70W (Tc) Surface Mount DPAK

N-Channel 650V 8.5A (Tc) 70W (Tc) Surface Mount DPAK

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD12N65M5 - 1102848-STD12N65M5 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD12N65M5
1102848-STD12N65M5
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD12N65M5 1102848-STD12N65M5
Manufacturer: STMicroelectronics Win Source Part Number: 1102848-STD12N65M5 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 70W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 8.5A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 22nC @ 10V Max Input Capacitance: 900pF @ 100V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 430 mOhm @ 4.3A, 10V Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 1102848-STD12N65M5
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 70W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 8.5A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 22nC @ 10V
Max Input Capacitance: 900pF @ 100V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 430 mOhm @ 4.3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STD12N65M5 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STD12N65M5
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STD12N65M5
MOSFET N-CH 650V 8.5A DPAK

MOSFET N-CH 650V 8.5A DPAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 497-10568-2-ND 1102848-STD12N65M5 STD12N65M5
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD12N65M5 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 SOT3; TO-252 (DPAK); D-Pak TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63
V(BR)DSS 650 volts
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