STMicroelectronics, Inc. Single FETs, MOSFETs STD12N65M5

Description
N-Channel 650V 8.5A (Tc) 70W (Tc) Surface Mount DPAK
Request a Quote Datasheet
Description
N-Channel 650V 8.5A (Tc) 70W (Tc) Surface Mount DPAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 497-10568-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-10568-2-ND
Single FETs, MOSFETs 497-10568-2-ND
N-Channel 650V 8.5A (Tc) 70W (Tc) Surface Mount DPAK

N-Channel 650V 8.5A (Tc) 70W (Tc) Surface Mount DPAK

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD12N65M5 - 1102848-STD12N65M5 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD12N65M5
1102848-STD12N65M5
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD12N65M5 1102848-STD12N65M5
Manufacturer: STMicroelectronics Win Source Part Number: 1102848-STD12N65M5 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 70W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 8.5A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 22nC @ 10V Max Input Capacitance: 900pF @ 100V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 430 mOhm @ 4.3A, 10V Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 1102848-STD12N65M5
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 70W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 8.5A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 22nC @ 10V
Max Input Capacitance: 900pF @ 100V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 430 mOhm @ 4.3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Singapore, Singapore
650V 8.5A DPAK MOSFET Transistor
278-STD12N65M5
650V 8.5A DPAK MOSFET Transistor 278-STD12N65M5
650V 8.5A N-CH MOSFET, 430mR, DPAK, TO-252 Product overview: STD12N65M5 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 8.5A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 8.5A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STD12N65M5 can be used for catalog matching and distributor lookup.

650V 8.5A N-CH MOSFET, 430mR, DPAK, TO-252 Product overview: STD12N65M5 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 8.5A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 8.5A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STD12N65M5 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STD12N65M5 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STD12N65M5
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STD12N65M5
MOSFET N-CH 650V 8.5A DPAK

MOSFET N-CH 650V 8.5A DPAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 497-10568-2-ND 1102848-STD12N65M5 278-STD12N65M5 STD12N65M5
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD12N65M5 650V 8.5A DPAK MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel
Package Type TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 SOT3; TO-252 (DPAK); D-Pak TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63
V(BR)DSS 650 volts
Unlock Full Specs
to access all available technical data

Similar Products

DC - 3.5 GHz, 100 Watt, 28 Volt GaN RF Power Transistor - TGF2929-FS - Qorvo
Specs
Transistor Technology / Material DC - 3.5 GHz, 100 Watt, 28 Volt GaN RF Power Transistor
Package Type NI-360
Power Gain 14 dB
View Details
IGBTs - Single - AIGW50N65F5XKSA1 - 860800-AIGW50N65F5XKSA1 - Win Source Electronics
Specs
TJ -40 to 175 C (-40 to 347 F)
Package Type SOT3; PG-TO247-3-41
Features IGBT Trench 650 V 270 W Through Hole PG-TO247-3-41
View Details
7 suppliers