N-Ch MOSFET 40V 80A 4mR DPAK Power Transistor Product overview: STD120N4F6 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 80A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 80A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STD120N4F6 can be used for catalog matching and distributor lookup.
MOSFET N-CH 40V 80A DPAK
Manufacturer: STMicroelectronics
Win Source Part Number: 1102844-STD120N4F6
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 110W (Tc)
Family Name: STD120N4F6
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 80A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 65nC @ 10V
Max Input Capacitance: 3850pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4 mOhm @ 40A, 10V
Alternative Parts (Cross-Reference): IPD038N04NGBTMA1; IPD038N04NGXT; IPD038N04N G; TK3R1P04PL,RQ;
Introduction Date: February 09, 2010
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2030
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Safety, Industrial, Power Management, Consumer Electronics, Portable Devices
N-Channel 40V 80A (Tc) 110W (Tc) Surface Mount DPAK
N-Channel 40V 80A (Tc) 110W (Tc) Surface Mount DPAK
MOSFET, N-CH, 40V, 80A, TO-252 ROHS COMPLIANT: YES
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MOSFET N-CH 40V 80A DPAK
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | DigiKey | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-STD120N4F6 | STD120N4F6 | 1102844-STD120N4F6 | 497-10781-1-ND | 47AK6927 | STD120N4F6 | STD120N4F6 |
| Product Name | 40V 80A DPAK MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD120N4F6 | Single FETs, MOSFETs | Mosfet, N-Ch, 40V, 80A, To-252 Rohs Compliant Stmicroelectronics | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | |||
| PD | 110000 milliwatts | 110000 milliwatts | 110000 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 40 volts | 40 volts |
