N-Channel 600V 10A (Tc) 90W (Tc) Through Hole I-PAK
Win Source Part Number: 1278095-STD11NM60N-1
Category: Discrete Semiconductor Products>Transistors
Series: MDmesh™ II
Package: Tube
Standard Package: 75
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 90W (Tc)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: I-PAK
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V
Vgs (Max): ±25V
Temperature Range - Operating: 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 84 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: 497-5963-5
Base Product Number: STD11
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET N-CH 600V 10A I-PAK
| DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Transistors | Transistors | RF Transistors |
| Product Number | 497-5963-5-ND | 1278095-STD11NM60N-1 | STD11NM60N-1 |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel |
