STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD11NM50N STD11NM50N

Description
Manufacturer: STMicroelectronics Win Source Part Number: 031109-STD11NM50N Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 70W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 8.5A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 19nC @ 10V Max Input Capacitance: 547pF @ 50V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 470 mOhm @ 4.5A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Sufficient
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD11NM50N - 031109-STD11NM50N - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - 497-10567-6-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 497-10567-2-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 497-10567-1-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STD11NM50N - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N Channel, 500V, 8.5A, To-252; Channel Type Stmicroelectronics - 71R6976 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: STMicroelectronics Win Source Part Number: 031109-STD11NM50N Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 70W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 8.5A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 19nC @ 10V Max Input Capacitance: 547pF @ 50V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 470 mOhm @ 4.5A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD11NM50N - 031109-STD11NM50N - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD11NM50N
031109-STD11NM50N
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD11NM50N 031109-STD11NM50N
Manufacturer: STMicroelectronics Win Source Part Number: 031109-STD11NM50N Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 70W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 8.5A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 19nC @ 10V Max Input Capacitance: 547pF @ 50V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 470 mOhm @ 4.5A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Sufficient

Manufacturer: STMicroelectronics
Win Source Part Number: 031109-STD11NM50N
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 70W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 8.5A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 19nC @ 10V
Max Input Capacitance: 547pF @ 50V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 470 mOhm @ 4.5A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - 497-10567-6-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-10567-6-ND
Single FETs, MOSFETs 497-10567-6-ND
N-Channel 500V 8.5A (Tc) 70W (Tc) Surface Mount DPAK

N-Channel 500V 8.5A (Tc) 70W (Tc) Surface Mount DPAK

Buy Now Datasheet
Single FETs, MOSFETs - 497-10567-2-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-10567-2-ND
Single FETs, MOSFETs 497-10567-2-ND
N-Channel 500V 8.5A (Tc) 70W (Tc) Surface Mount DPAK

N-Channel 500V 8.5A (Tc) 70W (Tc) Surface Mount DPAK

Buy Now Datasheet
Single FETs, MOSFETs - 497-10567-1-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-10567-1-ND
Single FETs, MOSFETs 497-10567-1-ND
N-Channel 500V 8.5A (Tc) 70W (Tc) Surface Mount DPAK

N-Channel 500V 8.5A (Tc) 70W (Tc) Surface Mount DPAK

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STD11NM50N - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STD11NM50N
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STD11NM50N
MOSFET N-CH 500V 8.5A DPAK

MOSFET N-CH 500V 8.5A DPAK

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
STD11NM50N
MOSFET STD11NM50N
MOSFET POWER MOSFET N-CH 500V

MOSFET POWER MOSFET N-CH 500V

Buy Now Datasheet
Mosfet, N Channel, 500V, 8.5A, To-252; Channel Type Stmicroelectronics - 71R6976 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 500V, 8.5A, To-252; Channel Type Stmicroelectronics
71R6976
Mosfet, N Channel, 500V, 8.5A, To-252; Channel Type Stmicroelectronics 71R6976
MOSFET, N CHANNEL, 500V, 8.5A, TO-252; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:8.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

MOSFET, N CHANNEL, 500V, 8.5A, TO-252; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:8.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 031109-STD11NM50N 497-10567-6-ND STD11NM50N STD11NM50N 71R6976
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD11NM50N Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet, N Channel, 500V, 8.5A, To-252; Channel Type Stmicroelectronics
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 500 volts
PD 70000 milliwatts
TJ 150 C (302 F)
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