Manufacturer: STMicroelectronics
Win Source Part Number: 1102843-STD110N8F6
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 167W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 80V
Continuous Drain Current at 25°C: 80A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 150nC @ 10V
Max Input Capacitance: 9130pF @ 40V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 6.5 mOhm @ 40A, 10V
Alternative Parts (Cross-Reference): IPD053N08N3G; IPD053N08N3 GXT;
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance
N-Channel 80V 80A (Tc) 167W (Tc) Surface Mount DPAK
N-Channel 80V 80A (Tc) 167W (Tc) Surface Mount DPAK
N-Channel 80V 80A (Tc) 167W (Tc) Surface Mount DPAK
N-channel 80 V, 0.0056 Ohm typ., 110 A, STripFET F6 Power MOSFET in a DPAK package Product overview: STD110N8F6 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 80 V, 0.0056 Ohm, 110 A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80 V, 0.0056 Ohm, 110 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STD110N8F6 can be used for catalog matching and distributor lookup.
MOSFET N-CH 80V 80A DPAK
MOSFET N-channel 80 V, 0.0056 Ohm typ., 110 A, STripFET F6 Power MOSFET in a DPAK package
MOSFET N-CH 80V 80A DPAK
80V 80A 6.5mΩ@40A,10V 167W 4.5V@250uA null DPAK MOSFETs ROHS
MOSFET, N-CH, 80V, 80A, 175DEG C, 167W; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0056ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power RoHS Compliant: Yes
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | LCSC Electronics Technology (HK) Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1102843-STD110N8F6 | 497-16032-6-ND | 278-STD110N8F6 | STD110N8F6 | STD110N8F6 | STD110N8F6 | STD110N8F6 | 26AH0143 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD110N8F6 | Single FETs, MOSFETs | N-Channel 80 V 0.0056 Ohm 110 A MOSFET Transistor | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs | Mosfet, N-Ch, 80V, 80A, 175Deg C, 167W; Transistor Polarity Stmicroelectronics |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | |||||
| V(BR)DSS | 80 volts | 80 volts | 80 volts | |||||
| PD | 167000 milliwatts | 167000 milliwatts | 167000 milliwatts | |||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||||
| Package Type | SOT3; TO-252 (DPAK); DPAK | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-3; TO-252 (DPAK) |
