(PRICE/TC), MOSFET, P-CH, -60V, -10A, TO-252-3; TRANSISTOR POLARITY:P CHANNEL; DRAIN SOURCE VOLTAGE VDS:60V; CONTINUOUS DRAIN CURRENT ID:10A; ON RESISTANCE RDS(ON):0.13OHM; TRANSISTOR MOUNTING:SURFACE MOUNT; RDS(ON) TEST VOLTAGE VGS:10V ROHS COMPLIANT: YE. FREE 2 YEAR RADWELL WARRANTY
MOSFET P-Ch 60V 10A STripFET F6 DPAK
MOSFET P-Ch 60V 10A STripFET F6 DPAK
MOSFET P-Ch 60V 10A STripFET F6 DPAK
Manufacturer: STMicroelectronics
Win Source Part Number: 031107-STD10P6F6
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 35W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 175°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 10A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 6.4nC @ 10V
Max Input Capacitance: 340pF @ 48V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 160 mOhm @ 5A, 10V
Alternative Parts (Cross-Reference): IRFR9024NTRPBF; TSM10P06CP ROG; STD15P6F6AG;
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Limited
MOSFET P CH 60V 10A DPAK
P-Channel 60V 10A (Tc) 35W (Tc) Surface Mount DPAK
P-Channel 60V 10A (Tc) 35W (Tc) Surface Mount DPAK
P-Channel 60V 10A (Tc) 35W (Tc) Surface Mount DPAK
MOSFET P-Ch 60V 0.15Ohm 10A STripFET VI DeepGate
MOSFET, P-CH, -60V, -10A, TO-252-3; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:10A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
MOSFET P CH 60V 10A DPAK
| Radwell International | RS Components, Ltd. | RS Components, Ltd. | Win Source Electronics | ODG (Origin Data Global) | DigiKey | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 67185921 | 9172747P | 9172747 | 031107-STD10P6F6 | STD10P6F6 | 497-13424-6-ND | STD10P6F6 | 98Y2467 | STD10P6F6 |
| Product Name | Transistor | MOSFETs | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD10P6F6 | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Mosfet, P-Ch, -60V, -10A, To-252-3; Channel Type Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | ||||
| MOSFET Operating Mode | Enhancement | ||||||||
| V(BR)DSS | 60 volts | 60 volts | 60 volts | 60 volts | |||||
| IDSS | 10000 milliamps | 10000 milliamps | 10000 milliamps | 10000 milliamps | |||||
| rDS(on) | 0.1600 ohms | 0.1600 ohms |
