P-channel 100 V, 0.136 Ohm typ., 10 A STripFET F6 Power MOSFET in a DPAK package Product overview: STD10P10F6 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 100 V, 0.136 Ohm, 10 A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100 V, 0.136 Ohm, 10 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STD10P10F6 can be used for catalog matching and distributor lookup.
MOSFET P-CH 100V 10A DPAK
P-Channel 100V 10A (Tc) 40W (Tc) Surface Mount DPAK
P-Channel 100V 10A (Tc) 40W (Tc) Surface Mount DPAK
P-Channel 100V 10A (Tc) 40W (Tc) Surface Mount DPAK
Manufacturer: STMicroelectronics
Win Source Part Number: 1102841-STD10P10F6
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 40W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 175°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 10A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 16.5nC @ 10V
Max Input Capacitance: 864pF @ 80V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 180 mOhm @ 5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Limited
MOSFET, P-CH, -100V, -10A, TO252AA-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-10A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):0.136ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-4V; Power RoHS Compliant: Yes
MOSFET P-CH 100V 10A DPAK
MOSFET P-channel 100 V, 0.136 Ohm typ., 10 A STripFET F6 Power MOSFET in a DPAK package
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-STD10P10F6 | STD10P10F6 | 497-16300-1-ND | 1102841-STD10P10F6 | 32AJ8876 | STD10P10F6 | STD10P10F6 |
| Product Name | P-Channel 100 V 0.136 Ohm 10 A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD10P10F6 | Mosfet, P-Ch, -100V, -10A, To252Aa-3; Transistor Polarity Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel; P-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 100 volts | 100 volts | |||||
| IDSS | 10000 milliamps | -10000 milliamps | |||||
| PD | 40000 milliwatts | 40000 milliwatts |
