600V 10A N-CH MOSFET DPAK, 550mR Rds(on) Product overview: STD10NM60N from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 10A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 10A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STD10NM60N can be used for catalog matching and distributor lookup.
N-Channel 600V 10A (Tc) 70W (Tc) Surface Mount DPAK
N-Channel 600V 10A (Tc) 70W (Tc) Surface Mount DPAK
N-Channel 600V 10A (Tc) 70W (Tc) Surface Mount DPAK
MOSFET N-CH 600V 10A DPAK
Manufacturer: STMicroelectronics
Win Source Part Number: 005188-STD10NM60N
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 70W (Tc)
Family Name: STD10NM60N
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 10A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 19nC @ 10V
Max Input Capacitance: 540pF @ 50V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 550 mOhm @ 4A, 10V
Alternative Parts (Cross-Reference): TK8P65W; IPD65R600C6ATMA1; IPD65R600E6XT; IPD65R600E6BTMA1;
Introduction Date: June 10, 2009
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2029
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Limited
MOSFET Transistor, N Channel, 10 A, 600 V, 0.53 ohm, 10 V, 3 V RoHS Compliant: Yes
600V 10A 550mΩ@10V,4A 70W 4V@250uA N Channel TO-252-2(DPAK) MOSFETs ROHS
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MOSFET N-CH 600V 10A DPAK
| ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Win Source Electronics | Newark, An Avnet Company | LCSC Electronics Technology (HK) Limited | Utmel Electronic Limited | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-STD10NM60N | 497-10021-1-ND | STD10NM60N | 005188-STD10NM60N | 94T3327 | STD10NM60N | 761-STD10NM60N | STD10NM60N | STD10NM60N |
| Product Name | 600V 10A DPAK MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD10NM60N | Mosfet Transistor, N Channel, 10 A, 600 V, 0.53 Ohm, 10 V, 3 V Rohs Compliant Stmicroelectronics | Triode/MOS Tube/Transistor >> MOSFETs | MOSFET N-CH 600V 10A DPAK | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||
| PD | 70000 milliwatts | 70000 milliwatts | 70000 milliwatts | 70000 milliwatts | 70000 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | SOT3; TO-252 (DPAK); DPAK | TO-3 | TO-252 (DPAK) | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | SILICON |
