STMicroelectronics, Inc. Single FETs, MOSFETs STD10NM60N

Description
MOSFET N-CH 600V 10A DPAK
  • Single FETs, MOSFETs - STD10NM60N - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD10NM60N - 005188-STD10NM60N - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - 497-10021-1-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 497-10021-2-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 497-10021-6-ND - DigiKey
    DigiKey
  • Mosfet Transistor, N Channel, 10 A, 600 V, 0.53 Ohm, 10 V, 3 V Rohs Compliant Stmicroelectronics - 94T3327 - Newark, An Avnet Company
    Newark, An Avnet Company
  • MOSFET N-CH 600V 10A DPAK - 761-STD10NM60N - Utmel Electronic Limited
    Utmel Electronic Limited
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STD10NM60N - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
MOSFET N-CH 600V 10A DPAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - STD10NM60N - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STD10NM60N
Single FETs, MOSFETs STD10NM60N
MOSFET N-CH 600V 10A DPAK

MOSFET N-CH 600V 10A DPAK

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD10NM60N - 005188-STD10NM60N - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD10NM60N
005188-STD10NM60N
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD10NM60N 005188-STD10NM60N
Manufacturer: STMicroelectronics Win Source Part Number: 005188-STD10NM60N Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 70W (Tc) Family Name: STD10NM60N Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 10A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 19nC @ 10V Max Input Capacitance: 540pF @ 50V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 550 mOhm @ 4A, 10V Alternative Parts (Cross-Reference): TK8P65W; IPD65R600C6ATMA1; IPD65R600E6XT; IPD65R600E6BTMA1; Introduction Date: June 10, 2009 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2029 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 005188-STD10NM60N
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 70W (Tc)
Family Name: STD10NM60N
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 10A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 19nC @ 10V
Max Input Capacitance: 540pF @ 50V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 550 mOhm @ 4A, 10V
Alternative Parts (Cross-Reference): TK8P65W; IPD65R600C6ATMA1; IPD65R600E6XT; IPD65R600E6BTMA1;
Introduction Date: June 10, 2009
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2029
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - 497-10021-1-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-10021-1-ND
Single FETs, MOSFETs 497-10021-1-ND
N-Channel 600V 10A (Tc) 70W (Tc) Surface Mount DPAK

N-Channel 600V 10A (Tc) 70W (Tc) Surface Mount DPAK

Buy Now Datasheet
Single FETs, MOSFETs - 497-10021-2-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-10021-2-ND
Single FETs, MOSFETs 497-10021-2-ND
N-Channel 600V 10A (Tc) 70W (Tc) Surface Mount DPAK

N-Channel 600V 10A (Tc) 70W (Tc) Surface Mount DPAK

Buy Now Datasheet
Single FETs, MOSFETs - 497-10021-6-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-10021-6-ND
Single FETs, MOSFETs 497-10021-6-ND
N-Channel 600V 10A (Tc) 70W (Tc) Surface Mount DPAK

N-Channel 600V 10A (Tc) 70W (Tc) Surface Mount DPAK

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
STD10NM60N
MOSFET STD10NM60N
MOSFET N-channel 600 V Mdmesh 10A

MOSFET N-channel 600 V Mdmesh 10A

Buy Now Datasheet
Mosfet Transistor, N Channel, 10 A, 600 V, 0.53 Ohm, 10 V, 3 V Rohs Compliant Stmicroelectronics - 94T3327 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, N Channel, 10 A, 600 V, 0.53 Ohm, 10 V, 3 V Rohs Compliant Stmicroelectronics
94T3327
Mosfet Transistor, N Channel, 10 A, 600 V, 0.53 Ohm, 10 V, 3 V Rohs Compliant Stmicroelectronics 94T3327
MOSFET Transistor, N Channel, 10 A, 600 V, 0.53 ohm, 10 V, 3 V RoHS Compliant: Yes

MOSFET Transistor, N Channel, 10 A, 600 V, 0.53 ohm, 10 V, 3 V RoHS Compliant: Yes

Supplier's Site
MOSFET N-CH 600V 10A DPAK - 761-STD10NM60N - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 600V 10A DPAK
761-STD10NM60N
MOSFET N-CH 600V 10A DPAK 761-STD10NM60N
MOSFET N-CH 600V 10A DPAK

MOSFET N-CH 600V 10A DPAK

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STD10NM60N - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STD10NM60N
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STD10NM60N
MOSFET N-CH 600V 10A DPAK

MOSFET N-CH 600V 10A DPAK

Supplier's Site
LCSC Electronics Technology (HK) Limited
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
STD10NM60N
Triode/MOS Tube/Transistor >> MOSFETs STD10NM60N
600V 10A 550mΩ@10V,4A 70W 4V@250uA N Channel TO-252-2(DPAK) MOSFETs ROHS

600V 10A 550mΩ@10V,4A 70W 4V@250uA N Channel TO-252-2(DPAK) MOSFETs ROHS

Supplier's Site Datasheet

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey VAST STOCK CO., LIMITED Newark, An Avnet Company Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited LCSC Electronics Technology (HK) Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number STD10NM60N 005188-STD10NM60N 497-10021-1-ND STD10NM60N 94T3327 761-STD10NM60N STD10NM60N STD10NM60N
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD10NM60N Single FETs, MOSFETs MOSFET Mosfet Transistor, N Channel, 10 A, 600 V, 0.53 Ohm, 10 V, 3 V Rohs Compliant Stmicroelectronics MOSFET N-CH 600V 10A DPAK Discrete Semiconductor Products - Transistors - FETs, MOSFETs Triode/MOS Tube/Transistor >> MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide) SILICON
V(BR)DSS 600 volts 600 volts 600 volts 600 volts
IDSS 10000 milliamps
PD 70000 milliwatts 70000 milliwatts 70000 milliwatts 70000 milliwatts
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