600V 10A N-CH MOSFET DPAK, 550mR Rds(on) Product overview: STD10NM60N from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 10A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 10A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STD10NM60N can be used for catalog matching and distributor lookup.
MOSFET N-CH 600V 10A DPAK
Manufacturer: STMicroelectronics
Win Source Part Number: 005188-STD10NM60N
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 70W (Tc)
Family Name: STD10NM60N
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 10A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 19nC @ 10V
Max Input Capacitance: 540pF @ 50V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 550 mOhm @ 4A, 10V
Alternative Parts (Cross-Reference): TK8P65W; IPD65R600C6ATMA1; IPD65R600E6XT; IPD65R600E6BTMA1;
Introduction Date: June 10, 2009
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2029
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Limited
N-Channel 600V 10A (Tc) 70W (Tc) Surface Mount DPAK
N-Channel 600V 10A (Tc) 70W (Tc) Surface Mount DPAK
N-Channel 600V 10A (Tc) 70W (Tc) Surface Mount DPAK
MOSFET N-CH 600V 10A DPAK
600V 10A 550mΩ@10V,4A 70W 4V@250uA N Channel TO-252-2(DPAK) MOSFETs ROHS
MOSFET Transistor, N Channel, 10 A, 600 V, 0.53 ohm, 10 V, 3 V RoHS Compliant: Yes
MOSFET N-CH 600V 10A DPAK
MOSFET N-channel 600 V Mdmesh 10A
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | DigiKey | Utmel Electronic Limited | LCSC Electronics Technology (HK) Limited | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-STD10NM60N | STD10NM60N | 005188-STD10NM60N | 497-10021-1-ND | 761-STD10NM60N | STD10NM60N | 94T3327 | STD10NM60N | STD10NM60N |
| Product Name | 600V 10A DPAK MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD10NM60N | Single FETs, MOSFETs | MOSFET N-CH 600V 10A DPAK | Triode/MOS Tube/Transistor >> MOSFETs | Mosfet Transistor, N Channel, 10 A, 600 V, 0.53 Ohm, 10 V, 3 V Rohs Compliant Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | |||
| PD | 70000 milliwatts | 70000 milliwatts | 70000 milliwatts | 70000 milliwatts | 70000 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | SILICON | |||||||
| V(BR)DSS | 600 volts | 600 volts | 600 volts | 600 volts |
