STMicroelectronics, Inc. N-Channel 600 V 520 mOhm 6.4 A MOSFET Transistor STD10N60M6

N-channel 600 V, 520 mOhm typ., 6.4 A MDmesh M6 Power MOSFET in a DPAK package Product overview: STD10N60M6 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600 V, 520 mOhm, 6.4 A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600 V, 520 mOhm, 6.4 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STD10N60M6 can be used for catalog matching and distributor lookup.

N-Channel 600V 6.4A (Tc) 60W (Tc) Surface Mount D-PAK (TO-252)

Win Source Part Number: 966945-STD10N60M6
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: MDmesh™ M6
Package: Tape & Reel (TR)
Standard Package: 2,500
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 6.4A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Power Dissipation (Max): 60W (Tc)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-PAK (TO-252)
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 338 pF @ 100 V
Vgs (Max): ±25V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 58 pct.
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: 497-STD10N60M6TR
Base Product Number: STD10
Drive Voltage (Max Rds On, Min Rds On): 10V