STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD10N60M2 STD10N60M2

Description
Manufacturer: STMicroelectronics Win Source Part Number: 135177-STD10N60M2 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 85W (Tc) Family Name: STD10N60M2 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 7.5A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 13.5nC @ 10V Max Input Capacitance: 400pF @ 100V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 600 mOhm @ 3A, 10V Alternative Parts (Cross-Reference): NDD60N550U1T4G; NDD60N550U1-35G; SPD07N60C3ZT; ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2028 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Balance
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 135177-STD10N60M2 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 85W (Tc) Family Name: STD10N60M2 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 7.5A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 13.5nC @ 10V Max Input Capacitance: 400pF @ 100V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 600 mOhm @ 3A, 10V Alternative Parts (Cross-Reference): NDD60N550U1T4G; NDD60N550U1-35G; SPD07N60C3ZT; ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2028 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD10N60M2 - 135177-STD10N60M2 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD10N60M2
135177-STD10N60M2
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD10N60M2 135177-STD10N60M2
Manufacturer: STMicroelectronics Win Source Part Number: 135177-STD10N60M2 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 85W (Tc) Family Name: STD10N60M2 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 7.5A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 13.5nC @ 10V Max Input Capacitance: 400pF @ 100V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 600 mOhm @ 3A, 10V Alternative Parts (Cross-Reference): NDD60N550U1T4G; NDD60N550U1-35G; SPD07N60C3ZT; ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2028 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 135177-STD10N60M2
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 85W (Tc)
Family Name: STD10N60M2
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 7.5A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 13.5nC @ 10V
Max Input Capacitance: 400pF @ 100V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 600 mOhm @ 3A, 10V
Alternative Parts (Cross-Reference): NDD60N550U1T4G; NDD60N550U1-35G; SPD07N60C3ZT;
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2028
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - STD10N60M2 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STD10N60M2
Single FETs, MOSFETs STD10N60M2
MOSFET N-CH 600V 7.5A DPAK

MOSFET N-CH 600V 7.5A DPAK

Supplier's Site Datasheet
Single FETs, MOSFETs - 497-13937-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-13937-2-ND
Single FETs, MOSFETs 497-13937-2-ND
N-Channel 600V 7.5A (Tc) 85W (Tc) Surface Mount DPAK

N-Channel 600V 7.5A (Tc) 85W (Tc) Surface Mount DPAK

Buy Now Datasheet
Single FETs, MOSFETs - 497-13937-1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-13937-1-ND
Single FETs, MOSFETs 497-13937-1-ND
N-Channel 600V 7.5A (Tc) 85W (Tc) Surface Mount DPAK

N-Channel 600V 7.5A (Tc) 85W (Tc) Surface Mount DPAK

Buy Now Datasheet
Single FETs, MOSFETs - 497-13937-6-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-13937-6-ND
Single FETs, MOSFETs 497-13937-6-ND
N-Channel 600V 7.5A (Tc) 85W (Tc) Surface Mount DPAK

N-Channel 600V 7.5A (Tc) 85W (Tc) Surface Mount DPAK

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STD10N60M2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STD10N60M2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STD10N60M2
MOSFET N-CH 600V 7.5A DPAK

MOSFET N-CH 600V 7.5A DPAK

Supplier's Site
Mosfet, N-Ch, 600V, 7.5A, To-252; Transistor Polarity Stmicroelectronics - 51AC9541 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 600V, 7.5A, To-252; Transistor Polarity Stmicroelectronics
51AC9541
Mosfet, N-Ch, 600V, 7.5A, To-252; Transistor Polarity Stmicroelectronics 51AC9541
MOSFET, N-CH, 600V, 7.5A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:7.5A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.55ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes

MOSFET, N-CH, 600V, 7.5A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:7.5A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.55ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET N-CH 600V 0.56Ohm 7.5A MDmesh M2

MOSFET N-CH 600V 0.56Ohm 7.5A MDmesh M2

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 135177-STD10N60M2 STD10N60M2 497-13937-2-ND STD10N60M2 51AC9541 STD10N60M2
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD10N60M2 Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 600V, 7.5A, To-252; Transistor Polarity Stmicroelectronics MOSFET
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 600 volts 600 volts
PD 85000 milliwatts 85000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; TO-252 (DPAK); DPAK TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 TO-3; TO-252 (DPAK)
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