STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD105N10F7AG STD105N10F7AG

Description
Manufacturer: STMicroelectronics Win Source Part Number: 1102839-STD105N10F7A G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 120W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 61nC @ 10V Max Input Capacitance: 4369pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8 mOhm @ 40A, 10V Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Limited Application Field: Used in Alternative Energy, Power Management, Portable Devices, Sensing & Instrumentation
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 1102839-STD105N10F7A G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 120W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 61nC @ 10V Max Input Capacitance: 4369pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8 mOhm @ 40A, 10V Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Limited Application Field: Used in Alternative Energy, Power Management, Portable Devices, Sensing & Instrumentation
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD105N10F7AG - 1102839-STD105N10F7AG - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD105N10F7AG
1102839-STD105N10F7AG
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD105N10F7AG 1102839-STD105N10F7AG
Manufacturer: STMicroelectronics Win Source Part Number: 1102839-STD105N10F7A G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 120W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 61nC @ 10V Max Input Capacitance: 4369pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8 mOhm @ 40A, 10V Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Limited Application Field: Used in Alternative Energy, Power Management, Portable Devices, Sensing & Instrumentation

Manufacturer: STMicroelectronics
Win Source Part Number: 1102839-STD105N10F7AG
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 120W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 80A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 61nC @ 10V
Max Input Capacitance: 4369pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8 mOhm @ 40A, 10V
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Limited
Application Field: Used in Alternative Energy, Power Management, Portable Devices, Sensing & Instrumentation

Buy Now Datasheet
Single FETs, MOSFETs - STD105N10F7AG - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STD105N10F7AG
Single FETs, MOSFETs STD105N10F7AG
MOSFET N-CH 100V 80A DPAK

MOSFET N-CH 100V 80A DPAK

Supplier's Site Datasheet
Singapore
Automotive N-Channel 100 V 6.8 mOhm MOSFET Transistor
278-STD105N10F7AG
Automotive N-Channel 100 V 6.8 mOhm MOSFET Transistor 278-STD105N10F7AG
Automotive-grade N-channel 100 V, 6.8 mOhm typ., 80 A STripFET F7 Power MOSFET in a DPAK package Product overview: STD105N10F7AG from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Automotive, N-Channel, 100 V, 6.8 mOhm, 80 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Automotive, 100 V, 6.8 mOhm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STD105N10F7AG can be used for catalog matching and distributor lookup.

Automotive-grade N-channel 100 V, 6.8 mOhm typ., 80 A STripFET F7 Power MOSFET in a DPAK package Product overview: STD105N10F7AG from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Automotive, N-Channel, 100 V, 6.8 mOhm, 80 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Automotive, 100 V, 6.8 mOhm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STD105N10F7AG can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - 497-15305-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-15305-2-ND
Single FETs, MOSFETs 497-15305-2-ND
N-Channel 100V 80A (Tc) 120W (Tc) Surface Mount DPAK

N-Channel 100V 80A (Tc) 120W (Tc) Surface Mount DPAK

Buy Now Datasheet
Single FETs, MOSFETs - 497-15305-1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-15305-1-ND
Single FETs, MOSFETs 497-15305-1-ND
N-Channel 100V 80A (Tc) 120W (Tc) Surface Mount DPAK

N-Channel 100V 80A (Tc) 120W (Tc) Surface Mount DPAK

Buy Now Datasheet
Single FETs, MOSFETs - 497-15305-6-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-15305-6-ND
Single FETs, MOSFETs 497-15305-6-ND
N-Channel 100V 80A (Tc) 120W (Tc) Surface Mount DPAK

N-Channel 100V 80A (Tc) 120W (Tc) Surface Mount DPAK

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET Automotive-grade N-channel 100 V, 6.8 mOhm typ., 80 A STripFET F7 Power MOSFET in a DPAK package

MOSFET Automotive-grade N-channel 100 V, 6.8 mOhm typ., 80 A STripFET F7 Power MOSFET in a DPAK package

Buy Now Datasheet
Mosfet, Aec-Q101, N-Ch, 100V, 80A, 120W Rohs Compliant Stmicroelectronics - 26AH0141 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Aec-Q101, N-Ch, 100V, 80A, 120W Rohs Compliant Stmicroelectronics
26AH0141
Mosfet, Aec-Q101, N-Ch, 100V, 80A, 120W Rohs Compliant Stmicroelectronics 26AH0141
MOSFET, AEC-Q101, N-CH, 100V, 80A, 120W ROHS COMPLIANT: YES

MOSFET, AEC-Q101, N-CH, 100V, 80A, 120W ROHS COMPLIANT: YES

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STD105N10F7AG - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STD105N10F7AG
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STD105N10F7AG
MOSFET N-CH 100V 80A DPAK

MOSFET N-CH 100V 80A DPAK

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. DigiKey VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1102839-STD105N10F7AG STD105N10F7AG 278-STD105N10F7AG 497-15305-2-ND STD105N10F7AG 26AH0141 STD105N10F7AG
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD105N10F7AG Single FETs, MOSFETs Automotive N-Channel 100 V 6.8 mOhm MOSFET Transistor Single FETs, MOSFETs MOSFET Mosfet, Aec-Q101, N-Ch, 100V, 80A, 120W Rohs Compliant Stmicroelectronics Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 100 volts 100 volts
PD 120000 milliwatts 120000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type SOT3; TO-252 (DPAK); DPAK TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 TO-3; TO-252 (DPAK) Surface Mount
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