STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD100N10LF7AG STD100N10LF7AG

Description
Manufacturer: STMicroelectronics Win Source Part Number: 1102837-STD100N10LF7 AG Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 125W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 73nC @ 10V Max Input Capacitance: 4000pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 9 mOhm @ 40A, 10V Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Balance
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 1102837-STD100N10LF7 AG Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 125W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 73nC @ 10V Max Input Capacitance: 4000pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 9 mOhm @ 40A, 10V Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD100N10LF7AG - 1102837-STD100N10LF7AG - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD100N10LF7AG
1102837-STD100N10LF7AG
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD100N10LF7AG 1102837-STD100N10LF7AG
Manufacturer: STMicroelectronics Win Source Part Number: 1102837-STD100N10LF7 AG Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 125W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 73nC @ 10V Max Input Capacitance: 4000pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 9 mOhm @ 40A, 10V Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 1102837-STD100N10LF7AG
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 125W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 80A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 73nC @ 10V
Max Input Capacitance: 4000pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 9 mOhm @ 40A, 10V
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Balance

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STD100N10LF7AG - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STD100N10LF7AG
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STD100N10LF7AG
MOSFET N-CH 100V 80A DPAK

MOSFET N-CH 100V 80A DPAK

Supplier's Site
Sheung Wan, Hong Kong
MOSFET Automotive-grade N-channel 100 V, 5 mOhm typ., 80 A STripFET F7 Power MOSFET in a DPAK package

MOSFET Automotive-grade N-channel 100 V, 5 mOhm typ., 80 A STripFET F7 Power MOSFET in a DPAK package

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Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1102837-STD100N10LF7AG STD100N10LF7AG STD100N10LF7AG
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD100N10LF7AG Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel
V(BR)DSS 100 volts
PD 125000 milliwatts
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