STMicroelectronics TRANSISTORS - RF Transistors (BJT) - STBV42GAP STBV42GAP

Description
Manufacturer: STMicroelectronics Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1151275-STBV42GAP Packaging: Cut Tape (CT) Polarity: NPN Number of Pins: 3 Categories: RF Transistors(BJT) Case / Package: TO-226-3 Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Limited Mount: Through Hole RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -65 °C Element Configuration: Single Max Power Dissipation: 1 W Max Breakdown Voltage: 400 V Max Operating Temperature: 150 °C Collector Emitter Breakdown Voltage: 400 V Collector Emitter Voltage (VCEO): 400 V Emitter Base Voltage (VEBO): 9 V Max Collector Current: 1 A
  • TRANSISTORS - RF Transistors (BJT) - STBV42GAP - 1151275-STBV42GAP - Win Source Electronics
    Win Source Electronics
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Description
Manufacturer: STMicroelectronics Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1151275-STBV42GAP Packaging: Cut Tape (CT) Polarity: NPN Number of Pins: 3 Categories: RF Transistors(BJT) Case / Package: TO-226-3 Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Limited Mount: Through Hole RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -65 °C Element Configuration: Single Max Power Dissipation: 1 W Max Breakdown Voltage: 400 V Max Operating Temperature: 150 °C Collector Emitter Breakdown Voltage: 400 V Collector Emitter Voltage (VCEO): 400 V Emitter Base Voltage (VEBO): 9 V Max Collector Current: 1 A
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TRANSISTORS - RF Transistors (BJT) - STBV42GAP - 1151275-STBV42GAP - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - STBV42GAP
1151275-STBV42GAP
TRANSISTORS - RF Transistors (BJT) - STBV42GAP 1151275-STBV42GAP
Manufacturer: STMicroelectronics Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1151275-STBV42GAP Packaging: Cut Tape (CT) Polarity: NPN Number of Pins: 3 Categories: RF Transistors(BJT) Case / Package: TO-226-3 Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Limited Mount: Through Hole RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -65 °C Element Configuration: Single Max Power Dissipation: 1 W Max Breakdown Voltage: 400 V Max Operating Temperature: 150 °C Collector Emitter Breakdown Voltage: 400 V Collector Emitter Voltage (VCEO): 400 V Emitter Base Voltage (VEBO): 9 V Max Collector Current: 1 A

Manufacturer: STMicroelectronics
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1151275-STBV42GAP
Packaging: Cut Tape (CT)
Polarity: NPN
Number of Pins: 3
Categories: RF Transistors(BJT)
Case / Package: TO-226-3
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Limited
Mount: Through Hole
RoHS: Compliant
Radiation Hardening: No
Min Operating Temperature: -65 °C
Element Configuration: Single
Max Power Dissipation: 1 W
Max Breakdown Voltage: 400 V
Max Operating Temperature: 150 °C
Collector Emitter Breakdown Voltage: 400 V
Collector Emitter Voltage (VCEO): 400 V
Emitter Base Voltage (VEBO): 9 V
Max Collector Current: 1 A

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Technical Specifications

  Win Source Electronics
Product Category Bipolar RF Transistors
Product Number 1151275-STBV42GAP
Product Name TRANSISTORS - RF Transistors (BJT) - STBV42GAP
Polarity NPN; NPN
Package Type TO-92; SOT3; TO-226-3
Packing Method Tape Reel; Cut Tape (CT)
VCEO 400 volts
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