STMicroelectronics TRANSISTORS - RF Transistors (BJT) - STBV42GAP STBV42GAP

Manufacturer: STMicroelectronics
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1151275-STBV42GAP
Packaging: Cut Tape (CT)
Polarity: NPN
Number of Pins: 3
Categories: RF Transistors(BJT)
Case / Package: TO-226-3
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Limited
Mount: Through Hole
RoHS: Compliant
Radiation Hardening: No
Min Operating Temperature: -65 °C
Element Configuration: Single
Max Power Dissipation: 1 W
Max Breakdown Voltage: 400 V
Max Operating Temperature: 150 °C
Collector Emitter Breakdown Voltage: 400 V
Collector Emitter Voltage (VCEO): 400 V
Emitter Base Voltage (VEBO): 9 V
Max Collector Current: 1 A

Trans GP BJT NPN 400V 1A 3-Pin TO-92 Ammo Product overview: STBV42GAP from STMicroelectronics is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 400V, 1A. Search-friendly keywords include transistor, BJT, switching, amplification, 400V, 1A, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-STBV42GAP can be used for catalog matching and distributor lookup.