STMicroelectronics, Inc. Single Bipolar Transistors STBV42-AP

Description
Bipolar (BJT) Transistor NPN 400V 1A 1W Through Hole TO-92AP
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor NPN 400V 1A 1W Through Hole TO-92AP
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - 497-12546-3-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
497-12546-3-ND
Single Bipolar Transistors 497-12546-3-ND
Bipolar (BJT) Transistor NPN 400V 1A 1W Through Hole TO-92AP

Bipolar (BJT) Transistor NPN 400V 1A 1W Through Hole TO-92AP

Buy Now Datasheet
Single Bipolar Transistors - STBV42-AP - ODG (Origin Data Global)
Shenzhen, China
Single Bipolar Transistors
STBV42-AP
Single Bipolar Transistors STBV42-AP
TRANS NPN 400V 1A TO92AP

TRANS NPN 400V 1A TO92AP

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single - STBV42-AP - 031099-STBV42-AP - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - STBV42-AP
031099-STBV42-AP
TRANSISTORS - Transistors (BJT) - Single - STBV42-AP 031099-STBV42-AP
Manufacturer: STMicroelectronics Win Source Part Number: 031099-STBV42-AP Packaging: AMMO PACKAGE Mounting: Through Hole Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-92AP Maximum Current Collector: 1A VCEO Maximum Collector-Emitter Breakdown Voltage: 400V Max Vce (sat): 1.5V @ 250mA, 750mA Collector Cut-off Current(Max): 1mA Typical Gain (hFE) (Min): 10 @ 400mA, 5V Maximum Power Dissipation: 1W Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 031099-STBV42-AP
Packaging: AMMO PACKAGE
Mounting: Through Hole
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-92AP
Maximum Current Collector: 1A
VCEO Maximum Collector-Emitter Breakdown Voltage: 400V
Max Vce (sat): 1.5V @ 250mA, 750mA
Collector Cut-off Current(Max): 1mA
Typical Gain (hFE) (Min): 10 @ 400mA, 5V
Maximum Power Dissipation: 1W
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
STBV42-AP
Bipolar Transistors - BJT STBV42-AP
Bipolar Transistors - BJT NPN Hi-Volt Fast Sw

Bipolar Transistors - BJT NPN Hi-Volt Fast Sw

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - STBV42-AP - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
STBV42-AP
Discrete Semiconductor Products - Transistors - Bipolar (BJT) STBV42-AP
TRANS NPN 400V 1A TO92AP

TRANS NPN 400V 1A TO92AP

Supplier's Site

Technical Specifications

  DigiKey ODG (Origin Data Global) Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 497-12546-3-ND STBV42-AP 031099-STBV42-AP STBV42-AP STBV42-AP
Product Name Single Bipolar Transistors Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - STBV42-AP Bipolar Transistors - BJT Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN; NPN NPN; NPN
Package Type TO-92; TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-92; TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-92; SOT3; TO-92AP
IC(max) 1000 milliamps 1000 milliamps
VCEO 400 volts 400 volts
Unlock Full Specs
to access all available technical data