STMicroelectronics, Inc. Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single STBV32G-AP

Description
Win Source Part Number: 1096719-STBV32G-AP Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Package: Cut Tape (CT),Tape & Box (TB) Standard Package: 2,000 Power - Max: 1.5 W Voltage - Collector Emitter Breakdown (Max): 400 V Current - Collector (Ic) (Max): 1.5 A Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 1.5A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 1A, 2V Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Supplier Device Package: TO-92AP Temperature Range - Operating: 150°C (TJ) Alternative Parts (Cross-Reference): PHD13003C,126; PHE13003C,126; PHD13003C,412; KSC2330OTA; KSC2330YTA; APT27ZTR-G1STBV32GAP ; ECCN: EAR99 Fake Threat In the Open Market: 45 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: STMicroelectronics Other Names: -497-14545-3,497-125 45-1,-497-12545-1,ST BV32G-AP-ND,-497-125 45-3,497-12545-3 Base Product Number: STBV32 Product Status: Obsolete
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - 1096719-STBV32G-AP - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - STBV32G-AP - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Win Source Part Number: 1096719-STBV32G-AP Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Package: Cut Tape (CT),Tape & Box (TB) Standard Package: 2,000 Power - Max: 1.5 W Voltage - Collector Emitter Breakdown (Max): 400 V Current - Collector (Ic) (Max): 1.5 A Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 1.5A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 1A, 2V Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Supplier Device Package: TO-92AP Temperature Range - Operating: 150°C (TJ) Alternative Parts (Cross-Reference): PHD13003C,126; PHE13003C,126; PHD13003C,412; KSC2330OTA; KSC2330YTA; APT27ZTR-G1STBV32GAP ; ECCN: EAR99 Fake Threat In the Open Market: 45 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: STMicroelectronics Other Names: -497-14545-3,497-125 45-1,-497-12545-1,ST BV32G-AP-ND,-497-125 45-3,497-12545-3 Base Product Number: STBV32 Product Status: Obsolete
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Suppliers

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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - 1096719-STBV32G-AP - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single
1096719-STBV32G-AP
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single 1096719-STBV32G-AP
Win Source Part Number: 1096719-STBV32G-AP Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Package: Cut Tape (CT),Tape & Box (TB) Standard Package: 2,000 Power - Max: 1.5 W Voltage - Collector Emitter Breakdown (Max): 400 V Current - Collector (Ic) (Max): 1.5 A Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 1.5A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 1A, 2V Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Supplier Device Package: TO-92AP Temperature Range - Operating: 150°C (TJ) Alternative Parts (Cross-Reference): PHD13003C,126; PHE13003C,126; PHD13003C,412; KSC2330OTA; KSC2330YTA; APT27ZTR-G1STBV32GAP ; ECCN: EAR99 Fake Threat In the Open Market: 45 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: STMicroelectronics Other Names: -497-14545-3,497-125 45-1,-497-12545-1,ST BV32G-AP-ND,-497-125 45-3,497-12545-3 Base Product Number: STBV32 Product Status: Obsolete

Win Source Part Number: 1096719-STBV32G-AP
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Package: Cut Tape (CT),Tape & Box (TB)
Standard Package: 2,000
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 400 V
Current - Collector (Ic) (Max): 1.5 A
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 1.5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 1A, 2V
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package: TO-92AP
Temperature Range - Operating: 150°C (TJ)
Alternative Parts (Cross-Reference): PHD13003C,126; PHE13003C,126; PHD13003C,412; KSC2330OTA; KSC2330YTA; APT27ZTR-G1STBV32GAP;
ECCN: EAR99
Fake Threat In the Open Market: 45 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: -497-14545-3,497-12545-1,-497-12545-1,STBV32G-AP-ND,-497-12545-3,497-12545-3
Base Product Number: STBV32
Product Status: Obsolete

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - STBV32G-AP - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
STBV32G-AP
Discrete Semiconductor Products - Transistors - Bipolar (BJT) STBV32G-AP
TRANS NPN 400V 1.5A TO92AP

TRANS NPN 400V 1.5A TO92AP

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Bipolar RF Transistors
Product Number 1096719-STBV32G-AP STBV32G-AP
Product Name Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN
Package Type TO-92; SOT3 TO-92; TO-92AP
IC(max) 1500 milliamps 1500 milliamps
Power Gain 5 dB
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