STMicroelectronics, Inc. 900V 8A 1.3 Ohm MOSFET Transistor STB9NK90Z

900V N-CH MOSFET, 8A, 1.3 Ohm, D2PAK, SuperMESH Product overview: STB9NK90Z from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 900V, 8A, 1.3 Ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 900V, 8A, 1.3 Ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STB9NK90Z can be used for catalog matching and distributor lookup.

N-Channel 900V 8A (Tc) 160W (Tc) Surface Mount D2PAK

N-Channel 900V 8A (Tc) 160W (Tc) Surface Mount D2PAK

N-Channel 900V 8A (Tc) 160W (Tc) Surface Mount D2PAK

Manufacturer: STMicroelectronics
Win Source Part Number: 1102817-STB9NK90Z
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 160W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 900V
Continuous Drain Current at 25°C: 8A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 100μA
Max Gate Charge: 72nC @ 10V
Max Input Capacitance: 2115pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.3 Ohm @ 3.6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Sufficient