800V 5.2A N-CH SuperMESH Power MOSFET D2PAK Product overview: STB9NK80Z from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 800V, 5.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, 5.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STB9NK80Z can be used for catalog matching and distributor lookup.
N-Channel 800V 5.2A (Tc) 125W (Tc) Surface Mount D2PAK
N-Channel 800V 5.2A (Tc) 125W (Tc) Surface Mount D2PAK
N-Channel 800V 5.2A (Tc) 125W (Tc) Surface Mount D2PAK
Win Source Part Number: 1278149-STB9NK80Z
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101, SuperMESH™
Package: Tape & Reel
Standard Package: 1,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 800 V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 2.6A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Power Dissipation (Max): 125W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1138 pF @ 25 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 62 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: 497-13936-6,497-1393
Base Product Number: STB9
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET N-CH 800V 5.2A D2PAK
MOSFET, AEC-Q101, N-CH, 800V, 5.2A, 125W ROHS COMPLIANT: YES
MOSFET N-CH 800V 5.2A D2PAK
MOSFET N-CH 800V 1.5Ohm typ 5.2A Zener-protected
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-STB9NK80Z | 497-13936-1-ND | 1278149-STB9NK80Z | STB9NK80Z | 26AH0139 | STB9NK80Z | STB9NK80Z |
| Product Name | 800V 5.2A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Mosfet, Aec-Q101, N-Ch, 800V, 5.2A, 125W Rohs Compliant Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||
| PD | 125000 milliwatts | 125000 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | SOT3 | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-3 | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | ||
| Transistor Grade / Operating Range | Automotive |
