STMicroelectronics, Inc. Single FETs, MOSFETs STB9NK70Z-1

Description
N-Channel 700V 7.5A (Tc) 115W (Tc) Through Hole I2PAK
Request a Quote Datasheet
Description
N-Channel 700V 7.5A (Tc) 115W (Tc) Through Hole I2PAK
Request a Quote Datasheet

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Product
Description
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Single FETs, MOSFETs - STB9NK70Z-1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
STB9NK70Z-1-ND
Single FETs, MOSFETs STB9NK70Z-1-ND
N-Channel 700V 7.5A (Tc) 115W (Tc) Through Hole I2PAK

N-Channel 700V 7.5A (Tc) 115W (Tc) Through Hole I2PAK

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB9NK70Z-1 - 066299-STB9NK70Z-1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB9NK70Z-1
066299-STB9NK70Z-1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB9NK70Z-1 066299-STB9NK70Z-1
Manufacturer: STMicroelectronics Win Source Part Number: 066299-STB9NK70Z-1 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 115W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: I2PAK Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA Drain-Source Breakdown Voltage: 700V Continuous Drain Current at 25°C: 7.5A (Tc) Gate-Source Threshold Voltage: 4.5V @ 100μA Max Gate Charge: 68nC @ 10V Max Input Capacitance: 1370pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.2 Ohm @ 4A, 10V Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 066299-STB9NK70Z-1
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 115W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: I2PAK
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 700V
Continuous Drain Current at 25°C: 7.5A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 100μA
Max Gate Charge: 68nC @ 10V
Max Input Capacitance: 1370pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.2 Ohm @ 4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STB9NK70Z-1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STB9NK70Z-1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STB9NK70Z-1
MOSFET N-CH 700V 7.5A I2PAK

MOSFET N-CH 700V 7.5A I2PAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number STB9NK70Z-1-ND 066299-STB9NK70Z-1 STB9NK70Z-1
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB9NK70Z-1 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-262-3 Long Leads, I2PAK, TO-262AA SOT3; I2PAK TO-262-3 Long Leads, I2PAK, TO-262AA
V(BR)DSS 700 volts
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