STMicroelectronics, Inc. Single FETs, MOSFETs STB9NK70Z-1

N-Channel 700V 7.5A (Tc) 115W (Tc) Through Hole I2PAK

Manufacturer: STMicroelectronics
Win Source Part Number: 066299-STB9NK70Z-1
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 115W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: I2PAK
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 700V
Continuous Drain Current at 25°C: 7.5A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 100μA
Max Gate Charge: 68nC @ 10V
Max Input Capacitance: 1370pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.2 Ohm @ 4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Limited

700V 7.5A 1.2R N-CH Power MOSFET TO-262-3 Product overview: STB9NK70Z-1 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 700V, 7.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 700V, 7.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STB9NK70Z-1 can be used for catalog matching and distributor lookup.