Manufacturer: STMicroelectronics
Win Source Part Number: 031092-STB9NK60ZT4
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 125W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 7A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 100μA
Max Gate Charge: 53nC @ 10V
Max Input Capacitance: 1110pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 950 mOhm @ 3.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Limited
N-Channel 600V 7A (Tc) 125W (Tc) Surface Mount D2PAK
N-Channel 600V 7A (Tc) 125W (Tc) Surface Mount D2PAK
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MOSFET N-Ch 600 Volt 7 Amp Zener SuperMESH
MOSFET, N CHANNEL, 600V, 7A, D2PAK; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:3.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V RoHS Compliant: Yes
MOSFET N-CH 600V 7A D2PAK
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | Radwell International | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 031092-STB9NK60ZT4 | 497-12544-6-ND | STB9NK60ZT4 | 38972537 | STB9NK60ZT4 | 33R1139 | STB9NK60ZT4 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB9NK60ZT4 | Single FETs, MOSFETs | Single FETs, MOSFETs | Transistor | MOSFET | Mosfet, N Channel, 600V, 7A, D2Pak; Channel Type Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| V(BR)DSS | 600 volts | 600 volts | |||||
| PD | 125000 milliwatts | 125000 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
