N-Channel 600V 7A (Tc) 125W (Tc) Surface Mount D2PAK
N-Channel 600V 7A (Tc) 125W (Tc) Surface Mount D2PAK
N-Channel 600V 7A (Tc) 125W (Tc) Surface Mount D2PAK
600V 7A N-CH MOSFET D2PAK, 0.95 Ohm RdsOn Product overview: STB9NK60ZT4 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 7A, 0.95 Ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 7A, 0.95 Ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STB9NK60ZT4 can be used for catalog matching and distributor lookup.
MOSFET N-CH 600V 7A D2PAK
Manufacturer: STMicroelectronics
Win Source Part Number: 031092-STB9NK60ZT4
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 125W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 7A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 100μA
Max Gate Charge: 53nC @ 10V
Max Input Capacitance: 1110pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 950 mOhm @ 3.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Limited
MOSFET, N CHANNEL, 600V, 7A, D2PAK; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:3.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V RoHS Compliant: Yes
POWER FIELD-EFFECT TRANSISTOR, 7A I(D), 600V, 0.95OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, D2PAK. FREE 2 YEAR RADWELL WARRANTY
MOSFET N-Ch 600 Volt 7 Amp Zener SuperMESH
MOSFET N-CH 600V 7A D2PAK
| DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | Newark, An Avnet Company | Radwell International | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 497-12544-6-ND | 278-STB9NK60ZT4 | STB9NK60ZT4 | 031092-STB9NK60ZT4 | 33R1139 | 38972537 | STB9NK60ZT4 | STB9NK60ZT4 |
| Product Name | Single FETs, MOSFETs | 600V 7A 0.95 Ohm MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB9NK60ZT4 | Mosfet, N Channel, 600V, 7A, D2Pak; Channel Type Stmicroelectronics | Transistor | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | |||
| Package Type | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263; SOT3; D2PAK | TO-3 | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | |||
| PD | 125000 milliwatts | 125000 milliwatts | 125000 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
