STMicroelectronics, Inc. Single FETs, MOSFETs STB95N3LLH6

Description
N-Channel 30V 80A (Tc) 70W (Tc) Surface Mount D²PAK (TO-263)
Request a Quote Datasheet
Description
N-Channel 30V 80A (Tc) 70W (Tc) Surface Mount D²PAK (TO-263)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 497-10022-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-10022-2-ND
Single FETs, MOSFETs 497-10022-2-ND
N-Channel 30V 80A (Tc) 70W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 30V 80A (Tc) 70W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB95N3LLH6 - 1102816-STB95N3LLH6 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB95N3LLH6
1102816-STB95N3LLH6
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB95N3LLH6 1102816-STB95N3LLH6
Manufacturer: STMicroelectronics Win Source Part Number: 1102816-STB95N3LLH6 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 70W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 24.5nC @ 4.5V Max Input Capacitance: 2200pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 4.2 mOhm @ 40A, 10V Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Balance Quantity per package: 1k pcs

Manufacturer: STMicroelectronics
Win Source Part Number: 1102816-STB95N3LLH6
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 70W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 80A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 24.5nC @ 4.5V
Max Input Capacitance: 2200pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4.2 mOhm @ 40A, 10V
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Balance
Quantity per package: 1k pcs

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STB95N3LLH6 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STB95N3LLH6
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STB95N3LLH6
MOSFET N-CH 30V 80A D2PAK

MOSFET N-CH 30V 80A D2PAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 497-10022-2-ND 1102816-STB95N3LLH6 STB95N3LLH6
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB95N3LLH6 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; SOT3; D2PAK TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
V(BR)DSS 30 volts
Unlock Full Specs
to access all available technical data