STMicroelectronics, Inc. Single FETs, MOSFETs STB8N65M5

Description
N-Channel 650V 7A (Tc) 70W (Tc) Surface Mount D²PAK (TO-263)
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Description
N-Channel 650V 7A (Tc) 70W (Tc) Surface Mount D²PAK (TO-263)
Request a Quote Datasheet

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Product
Description
Supplier Links
Single FETs, MOSFETs - 497-10875-6-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-10875-6-ND
Single FETs, MOSFETs 497-10875-6-ND
N-Channel 650V 7A (Tc) 70W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 650V 7A (Tc) 70W (Tc) Surface Mount D²PAK (TO-263)

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Single FETs, MOSFETs - 497-10875-1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-10875-1-ND
Single FETs, MOSFETs 497-10875-1-ND
N-Channel 650V 7A (Tc) 70W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 650V 7A (Tc) 70W (Tc) Surface Mount D²PAK (TO-263)

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Single FETs, MOSFETs - 497-10875-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-10875-2-ND
Single FETs, MOSFETs 497-10875-2-ND
N-Channel 650V 7A (Tc) 70W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 650V 7A (Tc) 70W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB8N65M5 - 1102815-STB8N65M5 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB8N65M5
1102815-STB8N65M5
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB8N65M5 1102815-STB8N65M5
Manufacturer: STMicroelectronics Win Source Part Number: 1102815-STB8N65M5 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 70W (Tc) Family Name: STB8N65M5 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 7A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 15nC @ 10V Max Input Capacitance: 690pF @ 100V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 600 mOhm @ 3.5A, 10V Alternative Parts (Cross-Reference): IPB65R600C6XT; AOB11S60L; IPB65R660CFDAXT; Introduction Date: October 23, 2009 ECCN: EAR99 Country of Origin: United States of America Estimated EOL Date: 2028 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 1102815-STB8N65M5
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 70W (Tc)
Family Name: STB8N65M5
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 7A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 15nC @ 10V
Max Input Capacitance: 690pF @ 100V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 600 mOhm @ 3.5A, 10V
Alternative Parts (Cross-Reference): IPB65R600C6XT; AOB11S60L; IPB65R660CFDAXT;
Introduction Date: October 23, 2009
ECCN: EAR99
Country of Origin: United States of America
Estimated EOL Date: 2028
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET MDmesh V N-Ch 650V 710V VDSS <0.6ohm 7A

MOSFET MDmesh V N-Ch 650V 710V VDSS <0.6ohm 7A

Buy Now Datasheet
Mosfet, N Channel, 650V, 7A, To-263; Channel Type Stmicroelectronics - 21T3980 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 650V, 7A, To-263; Channel Type Stmicroelectronics
21T3980
Mosfet, N Channel, 650V, 7A, To-263; Channel Type Stmicroelectronics 21T3980
MOSFET, N CHANNEL, 650V, 7A, TO-263; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

MOSFET, N CHANNEL, 650V, 7A, TO-263; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STB8N65M5 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STB8N65M5
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STB8N65M5
MOSFET N-CH 650V 7A D2PAK

MOSFET N-CH 650V 7A D2PAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 497-10875-6-ND 1102815-STB8N65M5 STB8N65M5 21T3980 STB8N65M5
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB8N65M5 MOSFET Mosfet, N Channel, 650V, 7A, To-263; Channel Type Stmicroelectronics Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; SOT3; D2PAK TO-3; TO-263 Surface Mount
V(BR)DSS 650 volts
PD 70000 milliwatts
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