N-Channel 650V 7A (Tc) 70W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 650V 7A (Tc) 70W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 650V 7A (Tc) 70W (Tc) Surface Mount D²PAK (TO-263)
650V 7A N-CH MOSFET D2PAK 560mR RdsOn Product overview: STB8N65M5 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STB8N65M5 can be used for catalog matching and distributor lookup.
Manufacturer: STMicroelectronics
Win Source Part Number: 1102815-STB8N65M5
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 70W (Tc)
Family Name: STB8N65M5
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 7A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 15nC @ 10V
Max Input Capacitance: 690pF @ 100V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 600 mOhm @ 3.5A, 10V
Alternative Parts (Cross-Reference): IPB65R600C6XT; AOB11S60L; IPB65R660CFDAXT;
Introduction Date: October 23, 2009
ECCN: EAR99
Country of Origin: United States of America
Estimated EOL Date: 2028
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Limited
MOSFET MDmesh V N-Ch 650V 710V VDSS <0.6ohm 7A
MOSFET N-CH 650V 7A D2PAK
MOSFET, N CHANNEL, 650V, 7A, TO-263; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 497-10875-6-ND | 278-STB8N65M5 | 1102815-STB8N65M5 | STB8N65M5 | STB8N65M5 | 21T3980 |
| Product Name | Single FETs, MOSFETs | 650V 7A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB8N65M5 | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N Channel, 650V, 7A, To-263; Channel Type Stmicroelectronics |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||
| Package Type | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; SOT3; D2PAK | Surface Mount | TO-3; TO-263 | ||
| PD | 70000 milliwatts | 70000 milliwatts | ||||
| TJ | -55 C (-67 F) | 150 C (302 F) |
