STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB80NF55L-08-1 STB80NF55L-08-1

Description
Manufacturer: STMicroelectronics Win Source Part Number: 066296-STB80NF55L-08 -1 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 300W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: 175°C (TJ) Case / Package: I2PAK Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 100nC @ 4.5V Max Input Capacitance: 4350pF @ 25V Maximum Gate-Source Voltage: ±16V Maximum Rds On at Id,Vgs: 8 mOhm @ 40A, 10V Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance Quantity per package: 50
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 066296-STB80NF55L-08 -1 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 300W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: 175°C (TJ) Case / Package: I2PAK Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 100nC @ 4.5V Max Input Capacitance: 4350pF @ 25V Maximum Gate-Source Voltage: ±16V Maximum Rds On at Id,Vgs: 8 mOhm @ 40A, 10V Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance Quantity per package: 50
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB80NF55L-08-1 - 066296-STB80NF55L-08-1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB80NF55L-08-1
066296-STB80NF55L-08-1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB80NF55L-08-1 066296-STB80NF55L-08-1
Manufacturer: STMicroelectronics Win Source Part Number: 066296-STB80NF55L-08 -1 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 300W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: 175°C (TJ) Case / Package: I2PAK Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 100nC @ 4.5V Max Input Capacitance: 4350pF @ 25V Maximum Gate-Source Voltage: ±16V Maximum Rds On at Id,Vgs: 8 mOhm @ 40A, 10V Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance Quantity per package: 50

Manufacturer: STMicroelectronics
Win Source Part Number: 066296-STB80NF55L-08-1
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 300W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: 175°C (TJ)
Case / Package: I2PAK
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 80A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 100nC @ 4.5V
Max Input Capacitance: 4350pF @ 25V
Maximum Gate-Source Voltage: ±16V
Maximum Rds On at Id,Vgs: 8 mOhm @ 40A, 10V
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Balance
Quantity per package: 50

Buy Now Datasheet
Single FETs, MOSFETs - 497-12542-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-12542-5-ND
Single FETs, MOSFETs 497-12542-5-ND
N-Channel 55V 80A (Tc) 300W (Tc) Through Hole I2PAK

N-Channel 55V 80A (Tc) 300W (Tc) Through Hole I2PAK

Buy Now Datasheet
Singapore
N-Channel 55V 0.0065Ohm 80A MOSFET Transistor
278-STB80NF55L-08-1
N-Channel 55V 0.0065Ohm 80A MOSFET Transistor 278-STB80NF55L-08-1
N-Channel 55V - 0.0065Ohm - 80A - I2PAK StripFET(TM) II POWER MOSFET Product overview: STB80NF55L-08-1 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 55V, 0.0065Ohm, 80A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 0.0065Ohm, 80A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STB80NF55L-08-1 can be used for catalog matching and distributor lookup.

N-Channel 55V - 0.0065Ohm - 80A - I2PAK StripFET(TM) II POWER MOSFET Product overview: STB80NF55L-08-1 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 55V, 0.0065Ohm, 80A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 0.0065Ohm, 80A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STB80NF55L-08-1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STB80NF55L-08-1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STB80NF55L-08-1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STB80NF55L-08-1
MOSFET N-CH 55V 80A I2PAK

MOSFET N-CH 55V 80A I2PAK

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 066296-STB80NF55L-08-1 497-12542-5-ND 278-STB80NF55L-08-1 STB80NF55L-08-1
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB80NF55L-08-1 Single FETs, MOSFETs N-Channel 55V 0.0065Ohm 80A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 55 volts
PD 300000 milliwatts 300000 milliwatts
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