Manufacturer: STMicroelectronics
Win Source Part Number: 1102813-STB80NF55L-0
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 300W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 80A (Tc)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 136nC @ 5V
Max Input Capacitance: 4850pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 6.5 mOhm @ 40A, 10V
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Balance
MOSFET N-Ch 55V 80A UltraFET II D2PAK
MOSFET N-Ch 55V 80A UltraFET II D2PAK
MOSFET N-Ch 55V 80A UltraFET II D2PAK
N-Channel 55V 80A (Tc) 300W (Tc) Surface Mount D2PAK
MOSFET Transistor, N Channel, 80 A, 55 V, 0.005 ohm, 10 V, 1 V RoHS Compliant: Yes
MOSFET N-Ch, 55V-0.005ohms 80A
MOSFET N-CH 55V 80A D2PAK
| Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | DigiKey | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1102813-STB80NF55L-06T4 | 6875083 | 6875083P | 497-12541-2-ND | 94T3322 | STB80NF55L-06T4 | STB80NF55L-06T4 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB80NF55L-06T4 | MOSFETs | MOSFETs | Single FETs, MOSFETs | Mosfet Transistor, N Channel, 80 A, 55 V, 0.005 Ohm, 10 V, 1 V Rohs Compliant Stmicroelectronics | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | |||
| V(BR)DSS | 55 volts | ||||||
| PD | 300000 milliwatts | ||||||
| TJ | -55 to 175 C (-67 to 347 F) |
