STMicroelectronics, Inc. Single FETs, MOSFETs STB80NF55-08T4

Description
MOSFET N-CH 55V 80A D2PAK
Request a Quote Datasheet
Description
MOSFET N-CH 55V 80A D2PAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - STB80NF55-08T4 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STB80NF55-08T4
Single FETs, MOSFETs STB80NF55-08T4
MOSFET N-CH 55V 80A D2PAK

MOSFET N-CH 55V 80A D2PAK

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB80NF55-08T4 - 031090-STB80NF55-08T4 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB80NF55-08T4
031090-STB80NF55-08T4
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB80NF55-08T4 031090-STB80NF55-08T4
Manufacturer: STMicroelectronics Win Source Part Number: 031090-STB80NF55-08T 4 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 300W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 155nC @ 10V Max Input Capacitance: 3850pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8 mOhm @ 40A, 10V Alternative Parts (Cross-Reference): SPB80N06S2-08; BUK9612-55B,118; STB80NF55-08T4; BUK7610-55AL,118; Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 031090-STB80NF55-08T4
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 300W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 80A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 155nC @ 10V
Max Input Capacitance: 3850pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8 mOhm @ 40A, 10V
Alternative Parts (Cross-Reference): SPB80N06S2-08; BUK9612-55B,118; STB80NF55-08T4; BUK7610-55AL,118;
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - 497-3737-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-3737-2-ND
Single FETs, MOSFETs 497-3737-2-ND
N-Channel 55V 80A (Tc) 300W (Tc) Surface Mount D2PAK

N-Channel 55V 80A (Tc) 300W (Tc) Surface Mount D2PAK

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STB80NF55-08T4 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STB80NF55-08T4
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STB80NF55-08T4
MOSFET N-CH 55V 80A D2PAK

MOSFET N-CH 55V 80A D2PAK

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number STB80NF55-08T4 031090-STB80NF55-08T4 497-3737-2-ND STB80NF55-08T4
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB80NF55-08T4 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 55 volts 55 volts
IDSS 80000 milliamps
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