Win Source Part Number: 997786-STB80NF55-08A
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101, STripFET™
Package: Tape & Reel
Standard Package: 1,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 55 V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3740 pF @ 15 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 54 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: 497-17142-6,497-1714
Base Product Number: STB80
Drive Voltage (Max Rds On, Min Rds On): 10V
N-Channel 55V 80A (Tc) 300W (Tc) Surface Mount D²PAK
N-Channel 55V 80A (Tc) 300W (Tc) Surface Mount D²PAK
N-Channel 55V 80A (Tc) 300W (Tc) Surface Mount D²PAK
MOSFET, AEC-Q101, N-CH, 55V, 80A, 300W ROHS COMPLIANT: YES
MOSFET N-CHANNEL 55V 80A D2PAK
MOSFET Automotive-grade N-channel 55 V, 6.5 mOhm typ., 80 A STripFET Power MOSFET in a D2PAK package
| Win Source Electronics | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 997786-STB80NF55-08AG | 497-17142-2-ND | 26AH0138 | STB80NF55-08AG | STB80NF55-08AG |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Mosfet, Aec-Q101, N-Ch, 55V, 80A, 300W Rohs Compliant Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | |||
| PD | 300000 milliwatts | ||||
| TJ | -55 to 175 C (-67 to 347 F) |
