STMicroelectronics, Inc. Single FETs, MOSFETs STB80NF55-06-1

Description
N-Channel 55V 80A (Tc) 300W (Tc) Through Hole I2PAK
Request a Quote Datasheet
Description
N-Channel 55V 80A (Tc) 300W (Tc) Through Hole I2PAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 497-16196-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-16196-5-ND
Single FETs, MOSFETs 497-16196-5-ND
N-Channel 55V 80A (Tc) 300W (Tc) Through Hole I2PAK

N-Channel 55V 80A (Tc) 300W (Tc) Through Hole I2PAK

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB80NF55-06-1 - 795592-STB80NF55-06-1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB80NF55-06-1
795592-STB80NF55-06-1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB80NF55-06-1 795592-STB80NF55-06-1
Manufacturer: STMicroelectronics Win Source Part Number: 795592-STB80NF55-06- 1 Series: STripFET II Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 175°C (TJ) Package: TO-262-3 Long Leads, I2Pak, TO-262AA Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Family Name: STB80NF55-06-1 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: I2PAK Channel Type Type: N Drain Source Voltage: 55V Vgs(th) (Maximum) @ Id: 4V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 189nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 4400pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 300W (Tc) Rds On (Maximum) @ Id, Vgs: 6.5 mOhm @ 40A, 10V Alternative Parts (Cross-Reference): SPI80N06S207NK; IRF1010ZLPBF; IRF1010EZLPBF; IRF1405LPBF; Introduction Date: August 23, 2000 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2029 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 795592-STB80NF55-06-1
Series: STripFET II
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-262-3 Long Leads, I2Pak, TO-262AA
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Family Name: STB80NF55-06-1
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: I2PAK
Channel Type Type: N
Drain Source Voltage: 55V
Vgs(th) (Maximum) @ Id: 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 189nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 4400pF @ 25V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 300W (Tc)
Rds On (Maximum) @ Id, Vgs: 6.5 mOhm @ 40A, 10V
Alternative Parts (Cross-Reference): SPI80N06S207NK; IRF1010ZLPBF; IRF1010EZLPBF; IRF1405LPBF;
Introduction Date: August 23, 2000
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2029
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET N-Ch, 55V-0.005ohms 80A

MOSFET N-Ch, 55V-0.005ohms 80A

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STB80NF55-06-1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STB80NF55-06-1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STB80NF55-06-1
MOSFET N-CH 55V 80A I2PAK

MOSFET N-CH 55V 80A I2PAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 497-16196-5-ND 795592-STB80NF55-06-1 STB80NF55-06-1 STB80NF55-06-1
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB80NF55-06-1 MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
Unlock Full Specs
to access all available technical data