MOSFET N-Ch 100V 80A UltraFET II D2PAK
MOSFET N-Ch 100V 80A UltraFET II D2PAK
MOSFET N-Ch 100V 80A UltraFET II D2PAK
100V 80A N-CH MOSFET D2PAK 15mR Rds(on) Product overview: STB80NF10T4 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 80A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 80A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STB80NF10T4 can be used for catalog matching and distributor lookup.
MOSFET N-CH 100V 80A D2PAK
N-Channel 100V 80A (Tc) 300W (Tc) Surface Mount D2PAK
N-Channel 100V 80A (Tc) 300W (Tc) Surface Mount D2PAK
N-Channel 100V 80A (Tc) 300W (Tc) Surface Mount D2PAK
Manufacturer: STMicroelectronics
Win Source Part Number: 031089-STB80NF10T4
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 300W (Tc)
Family Name: STB80NF10
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 80A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 182nC @ 10V
Max Input Capacitance: 5500pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 15 mOhm @ 40A, 10V
Alternative Parts (Cross-Reference): PSMN015-100BT; PSMN015-100B T/R; PSMN015-100B;
Introduction Date: April 01, 2000
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2026
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Limited
N CHANNEL MOSFET, 100V, 80A, D2-PAK; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:80A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
MOSFET N-CH 100V 80A D2PAK
| RS Components, Ltd. | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 6875080 | 6875080P | 278-STB80NF10T4 | STB80NF10T4 | 497-2489-2-ND | 031089-STB80NF10T4 | 89K1541 | STB80NF10T4 | STB80NF10T4 |
| Product Name | MOSFETs | MOSFETs | 100V 80A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB80NF10T4 | N Channel Mosfet, 100V, 80A, D2-Pak; Channel Type Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| MOSFET Operating Mode | Enhancement | ||||||||
| Package Type | TO-263; D2pak (to-263) | TO-263; TO-263 | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; SOT3; D2PAK | TO-3 | 5500 pF @ 25 V | ||
| Number of units in IC | 1 | ||||||||
| PD | 300000 milliwatts | 300000 milliwatts | 300000 milliwatts |
