Manufacturer: STMicroelectronics
Win Source Part Number: 000111-STB80NF03L-04
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 300W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -60°C to 175°C (TJ)
Case / Package: I2PAK
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 80A (Tc)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 110nC @ 4.5V
Max Input Capacitance: 5500pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4 mOhm @ 40A, 10V
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Balance
N-Channel 30V 80A (Tc) 300W (Tc) Through Hole I2PAK
MOSFET N-CH 30V 80A I2PAK
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | 000111-STB80NF03L-04-1 | 497-12540-5-ND | STB80NF03L-04-1 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB80NF03L-04-1 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | |
| V(BR)DSS | 30 volts | ||
| PD | 300000 milliwatts |
