STMicroelectronics, Inc. Single FETs, MOSFETs STB80NE03L-06T4

Description
MOSFET N-CH 30V 80A D2PAK
Request a Quote Datasheet
Description
MOSFET N-CH 30V 80A D2PAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - STB80NE03L-06T4 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STB80NE03L-06T4
Single FETs, MOSFETs STB80NE03L-06T4
MOSFET N-CH 30V 80A D2PAK

MOSFET N-CH 30V 80A D2PAK

Supplier's Site Datasheet
Singapore
N-Channel 80A 30V 0.008ohm MOSFET Transistor
278-STB80NE03L-06T4
N-Channel 80A 30V 0.008ohm MOSFET Transistor 278-STB80NE03L-06T4
80A, 30V, 0.008ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, D2PAK-3 Product overview: STB80NE03L-06T4 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 80A, 30V, 0.008ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80A, 30V, 0.008ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STB80NE03L-06T4 can be used for catalog matching and distributor lookup.

80A, 30V, 0.008ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, D2PAK-3 Product overview: STB80NE03L-06T4 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 80A, 30V, 0.008ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80A, 30V, 0.008ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STB80NE03L-06T4 can be used for catalog matching and distributor lookup.

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB80NE03L-06T4 - 756915-STB80NE03L-06T4 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB80NE03L-06T4
756915-STB80NE03L-06T4
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB80NE03L-06T4 756915-STB80NE03L-06T4
Manufacturer: STMicroelectronics Win Source Part Number: 756915-STB80NE03L-06 T4 Series: STripFET Packaging: Reel - TR Operating Temperature Range: -55°C ~ 175°C (TJ) Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Part Status: Obsolete(EOL) Family Name: STB80NE03L-06 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Manufacturer Homepage: www.st.com Manufacturer Package: D2PAK Channel Type Type: N Drain Source Voltage: 30V Vgs(th) (Maximum) @ Id: 2.5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 130nC @ 5V Input Capacitance (Ciss) (Maximum) @ Vds: 6500pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 150W (Tc) Rds On (Maximum) @ Id, Vgs: 6 mOhm @ 40A, 10V Alternative Parts (Cross-Reference): SPB80N03S2L06NT; SPB80N03S2L-06 G; SPB80N03S2L06GXT; Introduction Date: July 31, 1998 Estimated EOL Date: Obsolete Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 756915-STB80NE03L-06T4
Series: STripFET
Packaging: Reel - TR
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Part Status: Obsolete(EOL)
Family Name: STB80NE03L-06
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Manufacturer Homepage: www.st.com
Manufacturer Package: D2PAK
Channel Type Type: N
Drain Source Voltage: 30V
Vgs(th) (Maximum) @ Id: 2.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 130nC @ 5V
Input Capacitance (Ciss) (Maximum) @ Vds: 6500pF @ 25V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 150W (Tc)
Rds On (Maximum) @ Id, Vgs: 6 mOhm @ 40A, 10V
Alternative Parts (Cross-Reference): SPB80N03S2L06NT; SPB80N03S2L-06 G; SPB80N03S2L06GXT;
Introduction Date: July 31, 1998
Estimated EOL Date: Obsolete
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - STB80NE03L-06T4-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
STB80NE03L-06T4-ND
Single FETs, MOSFETs STB80NE03L-06T4-ND
N-Channel 30V 80A (Tc) 150W (Tc) Surface Mount D2PAK

N-Channel 30V 80A (Tc) 150W (Tc) Surface Mount D2PAK

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STB80NE03L-06T4 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STB80NE03L-06T4
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STB80NE03L-06T4
MOSFET N-CH 30V 80A D2PAK

MOSFET N-CH 30V 80A D2PAK

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number STB80NE03L-06T4 278-STB80NE03L-06T4 756915-STB80NE03L-06T4 STB80NE03L-06T4-ND STB80NE03L-06T4
Product Name Single FETs, MOSFETs N-Channel 80A 30V 0.008ohm MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB80NE03L-06T4 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 30 volts
IDSS 80000 milliamps
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