STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB7ANM60N STB7ANM60N

Description
Manufacturer: STMicroelectronics Win Source Part Number: 1102809-STB7ANM60N Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 45W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 5A (Tc) Gate-Source Threshold Voltage: 4V @ 250mA Max Gate Charge: 14nC @ 10V Max Input Capacitance: 363pF @ 50V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 900 mOhm @ 2.5A, 10V Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB7ANM60N - 1102809-STB7ANM60N - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - 497-13935-2-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 497-13935-6-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 497-13935-1-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STB7ANM60N - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N-Ch, 600V, 5A, To-263 Rohs Compliant Stmicroelectronics - 47AK6922 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: STMicroelectronics Win Source Part Number: 1102809-STB7ANM60N Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 45W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 5A (Tc) Gate-Source Threshold Voltage: 4V @ 250mA Max Gate Charge: 14nC @ 10V Max Input Capacitance: 363pF @ 50V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 900 mOhm @ 2.5A, 10V Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB7ANM60N - 1102809-STB7ANM60N - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB7ANM60N
1102809-STB7ANM60N
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB7ANM60N 1102809-STB7ANM60N
Manufacturer: STMicroelectronics Win Source Part Number: 1102809-STB7ANM60N Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 45W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 5A (Tc) Gate-Source Threshold Voltage: 4V @ 250mA Max Gate Charge: 14nC @ 10V Max Input Capacitance: 363pF @ 50V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 900 mOhm @ 2.5A, 10V Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 1102809-STB7ANM60N
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 45W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 5A (Tc)
Gate-Source Threshold Voltage: 4V @ 250mA
Max Gate Charge: 14nC @ 10V
Max Input Capacitance: 363pF @ 50V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 900 mOhm @ 2.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - 497-13935-2-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-13935-2-ND
Single FETs, MOSFETs 497-13935-2-ND
N-Channel 600V 5A (Tc) 45W (Tc) Surface Mount D2PAK

N-Channel 600V 5A (Tc) 45W (Tc) Surface Mount D2PAK

Buy Now Datasheet
Single FETs, MOSFETs - 497-13935-6-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-13935-6-ND
Single FETs, MOSFETs 497-13935-6-ND
N-Channel 600V 5A (Tc) 45W (Tc) Surface Mount D2PAK

N-Channel 600V 5A (Tc) 45W (Tc) Surface Mount D2PAK

Buy Now Datasheet
Single FETs, MOSFETs - 497-13935-1-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-13935-1-ND
Single FETs, MOSFETs 497-13935-1-ND
N-Channel 600V 5A (Tc) 45W (Tc) Surface Mount D2PAK

N-Channel 600V 5A (Tc) 45W (Tc) Surface Mount D2PAK

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
SMD 600V 5A DPAK MOSFET Transistor
278-STB7ANM60N
SMD 600V 5A DPAK MOSFET Transistor 278-STB7ANM60N
600V 5A N-CH MOSFET DPAK Surface Mount Power Transistor Product overview: STB7ANM60N from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 600V, 5A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 600V, 5A, DPAK, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STB7ANM60N can be used for catalog matching and distributor lookup.

600V 5A N-CH MOSFET DPAK Surface Mount Power Transistor Product overview: STB7ANM60N from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 600V, 5A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 600V, 5A, DPAK, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STB7ANM60N can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STB7ANM60N - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STB7ANM60N
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STB7ANM60N
MOSFET N-CH 600V 5A D2PAK

MOSFET N-CH 600V 5A D2PAK

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
STB7ANM60N
MOSFET STB7ANM60N
MOSFET N-CH 600V 5A 0.84Ohm MDmesh II

MOSFET N-CH 600V 5A 0.84Ohm MDmesh II

Buy Now Datasheet
Mosfet, N-Ch, 600V, 5A, To-263 Rohs Compliant Stmicroelectronics - 47AK6922 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 600V, 5A, To-263 Rohs Compliant Stmicroelectronics
47AK6922
Mosfet, N-Ch, 600V, 5A, To-263 Rohs Compliant Stmicroelectronics 47AK6922
MOSFET, N-CH, 600V, 5A, TO-263 ROHS COMPLIANT: YES

MOSFET, N-CH, 600V, 5A, TO-263 ROHS COMPLIANT: YES

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1102809-STB7ANM60N 497-13935-2-ND 278-STB7ANM60N STB7ANM60N STB7ANM60N 47AK6922
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB7ANM60N Single FETs, MOSFETs SMD 600V 5A DPAK MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet, N-Ch, 600V, 5A, To-263 Rohs Compliant Stmicroelectronics
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 600 volts 600 volts
PD 45000 milliwatts 45000 milliwatts
TJ 150 C (302 F) -55 C (-67 F)
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