STMicroelectronics, Inc. Single FETs, MOSFETs STB75N20

Description
N-Channel 200V 75A (Tc) 190W (Tc) Surface Mount D2PAK
Request a Quote Datasheet
Description
N-Channel 200V 75A (Tc) 190W (Tc) Surface Mount D2PAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
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Single FETs, MOSFETs - 497-5313-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-5313-2-ND
Single FETs, MOSFETs 497-5313-2-ND
N-Channel 200V 75A (Tc) 190W (Tc) Surface Mount D2PAK

N-Channel 200V 75A (Tc) 190W (Tc) Surface Mount D2PAK

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB75N20 - 1102805-STB75N20 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB75N20
1102805-STB75N20
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB75N20 1102805-STB75N20
Manufacturer: STMicroelectronics Win Source Part Number: 1102805-STB75N20 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 190W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -50°C to 150°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 75A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 84nC @ 10V Max Input Capacitance: 3260pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 34 mOhm @ 37A, 10V Alternative Parts (Cross-Reference): IXTA60N20T; STB75N20T4; STB75NF20; Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 1102805-STB75N20
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 190W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -50°C to 150°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 75A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 84nC @ 10V
Max Input Capacitance: 3260pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 34 mOhm @ 37A, 10V
Alternative Parts (Cross-Reference): IXTA60N20T; STB75N20T4; STB75NF20;
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STB75N20 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STB75N20
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STB75N20
MOSFET N-CH 200V 75A D2PAK

MOSFET N-CH 200V 75A D2PAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 497-5313-2-ND 1102805-STB75N20 STB75N20
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB75N20 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; SOT3; D2PAK TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
V(BR)DSS 200 volts
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